Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 6

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching

100%
Grodzicki M., Wasielewski R., Surma S., Ciszewski A.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue S
S-82-S-85
EN
The surface of 6H-SiC(0001) samples was subjected to etching under H_{2}/Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.
2
Content available remote

Modification of Electronic Structure of n-GaN(0001) Surface by N⁺-Ion Bombardment

100%
Grodzicki M., Mazur P., Ciszewski A.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
351-353
EN
The electronic structure of n-type GaN(0001) surface and its modification by N⁺ ion bombardment are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Low-energy N⁺ ion bombardment, which was done using an ion gun at an energy of 200 eV, leads to nitriding of the surface. The process changes the surface stoichiometry and, consequently, provides formation of a disordered altered GaN layer. The calculated electron affinity of the clean n-GaN surface of 3.4 eV and band bending of 0.2 eV became changed after bombardment to 2.9 eV and 0.8 eV, respectively. The obtained difference in valence band maximum between the clean sample and the bombarded one was 0.6 eV.
3
Content available remote

AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)

100%
Mazur P., Zuber S., Grodzicki M., Ciszewski A.
|
|
vol. 126
|
issue 5
1131-1133
EN
Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
4
Content available remote

Sb Layers on p-GaN: UPS, XPS and LEED Study

88%
Grodzicki M., Mazur P., Pers J., Zuber S., Ciszewski A.
|
|
vol. 126
|
issue 5
1128-1130
EN
The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
5
Content available remote

Electronic Properties of Structures Containing Films of Alq₃ and LiBr Deposited on Si(111) Crystal

76%
Sito J., Grodzicki M., Lament K., Wasielewski R., Mazur P., Ciszewski A.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
357-360
EN
The electronic structures of Alq₃/Si(111) and Alq₃/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.
6
Content available remote

Ru/GaN(0001) Interface Properties

76%
Wasielewski R., Grodzicki M., Sito J., Lament K., Mazur P., Ciszewski A.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
354-357
EN
We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. While X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayers, the ultraviolet photoelectron spectroscopy show a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.