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PLC implementation in the form of a System-on-a-Chip

100%
Mazur P., Czerwinski R., Chmiel M., Mazur P., Czerwinski R., Chmiel M.
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2020
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issue 6
2
Content available remote

Dynamics of a Polish Internet-Based Social Network

95%
Zmarzłowski K., Mazur P., Orłowski A.
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issue 4
700-702
EN
Dynamics of a number of new users registering for the first time to a Polish internet-base social network http://Grono.net is investigated via various regression models. Trends are estimated and the statistical significance of their forecasting is tested.
3
Content available remote

Genetic Algorithms Approach to Community Detection

95%
Mazur P., Zmarzłowski K., Orłowski A.
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issue 4
703-705
EN
The so-called community detection problem is investigated within a framework of graph theory. Genetic algorithms approach is applied to the task of identifying possible communities. Results obtained for two different fitness functions are presented and compared to each other.
4
Content available remote

Angular Distributions of Secondary Electrons Emitted from the Polycrystalline Silver

95%
Doliński W., Palczyński J., Mazur P., Gieniec L.
Acta Physica Polonica A
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1992
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vol. 81
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issue 2
211-222
EN
The angular distributions of secondary electrons (including Auger electrons) of different energies emitted from polycrystalline silver bombarded with primary electrons (E_{p} = 1000 and 2500 eV) were measured with a RFA analyzer equipped with an additional collector (acceptance angle ≈ 4°). Additionally, the angular distributions of primary electrons of different energies elastically backscattered from the same sample were also investigated by means of a specially constructed rotable RFA analyzer equipped with a channeltron. The results obtained show the cosine distribution of secondary and Auger electrons emitted as shown previously in the literature. The angular distributions of electrons backscattered elastically depend on electron energy and are in good agreement with theoretical calculations (Monte Carlo simulation of primary electrons trajectories in solids) proposed by Jabłoński.
5
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Modification of Electronic Structure of n-GaN(0001) Surface by N⁺-Ion Bombardment

95%
Grodzicki M., Mazur P., Ciszewski A.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
351-353
EN
The electronic structure of n-type GaN(0001) surface and its modification by N⁺ ion bombardment are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Low-energy N⁺ ion bombardment, which was done using an ion gun at an energy of 200 eV, leads to nitriding of the surface. The process changes the surface stoichiometry and, consequently, provides formation of a disordered altered GaN layer. The calculated electron affinity of the clean n-GaN surface of 3.4 eV and band bending of 0.2 eV became changed after bombardment to 2.9 eV and 0.8 eV, respectively. The obtained difference in valence band maximum between the clean sample and the bombarded one was 0.6 eV.
6
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AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)

95%
Mazur P., Zuber S., Grodzicki M., Ciszewski A.
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vol. 126
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issue 5
1131-1133
EN
Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
7
Content available remote

PTCDI-C8 Adsorption on Si(100)

95%
Lament K., Mazur P., Zuber S., Ciszewski A.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
775-776
EN
Adsorption of N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) on the Si(100) surface has been examined using X-ray photoelectron spectroscopy and scanning tunneling microscopy. X-ray photoelectron spectroscopy results show that the bonds are formed between the carbonyl groups of the molecules and the substrate. Scanning tunneling microscopy results show that the first and further layers are disordered.
8
Content available remote

Sb Layers on p-GaN: UPS, XPS and LEED Study

83%
Grodzicki M., Mazur P., Pers J., Zuber S., Ciszewski A.
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vol. 126
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issue 5
1128-1130
EN
The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
9
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Electronic Properties of Structures Containing Films of Alq₃ and LiBr Deposited on Si(111) Crystal

72%
Sito J., Grodzicki M., Lament K., Wasielewski R., Mazur P., Ciszewski A.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
357-360
EN
The electronic structures of Alq₃/Si(111) and Alq₃/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.
10
Content available remote

Ru/GaN(0001) Interface Properties

72%
Wasielewski R., Grodzicki M., Sito J., Lament K., Mazur P., Ciszewski A.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
354-357
EN
We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. While X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayers, the ultraviolet photoelectron spectroscopy show a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV.
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