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1

Influence of Coimplantation on Activation of Er Emission in Si

100%

Przybylińska H., Hendorfer G., Jantsch W., Palmetshofer L.

Acta Physica Polonica A

|

1995

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vol. 87

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issue 2

365-368

EN

The results of high resolution photoluminescence studies of erbium implanted silicon are presented. We show that the apparent enhancement of Er emission by coimplantation with light elements is not due to formation of Er-dopant complexes, but rather to Er forming complexes with defects induced by the implantation process alone.

2

Erbium Luminescence in Silicon

100%

Przybylińska H., Jantsch W., Palmetshofer L.

Acta Physica Polonica A

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1996

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vol. 90

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issue 1

83-92

EN

We report on high resolution photoluminescence investigations of Er-implanted Si and demonstrate the variety of Er centers or complexes with impurities and native Si-defects formed depending on the processing parameters. These centers are shown to differ in the efficiency of excitation transfer as well as high temperature photoluminescence yield. The mechanisms responsible for the photoluminescence quenching at different temperature regimes are discussed.

3

Defect Levels in Gallium Arsenide after Irradiation with Light Ions

100%

Schmidt T., Palmetshofer L., Lübke K.

Acta Physica Polonica A

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1995

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vol. 87

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issue 2

543-546

EN

Deep level centers in GaAs implanted with light ions (H^{+}, He^{+}) were studied by means of deep level transient spectroscopy, double correlation deep level transient spectroscopy and capacity voltage carrier profiling directly after the implantation process and after annealing at various temperatures. Five different electron traps with energy positions between 0.13-0.75 eV are detected. From the evaluated defect production and carrier trapping yields and their annealing behavior we conclude that each of these traps efficiently contributes to the trapping of free carriers. The EL2 defect is created in too low concentrations in order to significantly account for the removal of free carriers.

4

Optically Active Centers in Er-Implanted Silicon

76%

Przybylińska H., Jantsch W., Hendorfer G., Palmetshofer L., Wilson R. J., Sealy B. J.

Acta Physica Polonica A

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1995

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vol. 88

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issue 5

877-880

EN

We show that of all the optically active Er centers in silicon found after ion implantation and optimum annealing (900°C) the isolated cubic interstitial Er is the dominant PL center above 100 K. At lower anneal temperatures ( ≈ 600°C) with later rapid thermal anneal at 900°C oxygen related centers also emit.

5

Optically Active Si:Er Layers Grown by the Sublimation MBE Method

52%

Stepikhova M., Andreev A., Andreev B., Krasil'nik Z., Shmagin V., Kuznetsov V., Rubtsova R., Jantsch W., Ellmer H., Palmetshofer L., Preier H., Karpov Y., Piplits K., Hutter H.

Acta Physica Polonica A

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1998

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vol. 94

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issue 3

549-554

EN

We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10^{18} cm^{-3}. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm^{2} V^{-1} s^{-1} at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.

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5 Acta Physica Polonica A

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1 Schmidt T.

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1 Stepikhova M.

1 Wilson R. J.

Influence of Coimplantation on Activation of Er Emission in Si

Erbium Luminescence in Silicon

Defect Levels in Gallium Arsenide after Irradiation with Light Ions

Optically Active Centers in Er-Implanted Silicon

Optically Active Si:Er Layers Grown by the Sublimation MBE Method