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EN
Single crystals of ErPdBi were grown from Bi-flux. The crystal structure of MgAgAs-type was confirmed using X-ray diffraction. Magnetization, magnetic susceptibility, electrical resistance and heat capacity measurements revealed an antiferromagnetic phase transition at T_{N} = 1.2 K. At high temperatures, the electrical resistance has a semiconducting-like character (dR/dT < 0 ). The resistance starts decreasing with decreasing T below 15 K and shows a very sharp drop below T_{N} but remains finite down to 0.4 K. Hence, no obvious evidence of superconductivity was found in the electrical transport data. On the other hand, the real part of AC magnetic susceptibility is negative below T_{C} = 1.6 K and its imaginary component has a clear maximum at this temperature that might be associated with the onset of superconducting state. The electrical resistance revealed Shubnikov-de Haas oscillations in magnetic fields 8-33 T. Their amplitude decreases with increasing T and disappears above 10 K. Cyclotron mass determined from this dependence is 0.21 m_{e}.
EN
High quality single crystals of some representatives of half-Heusler family were grown from Bi-flux. For single crystals characterization, X-ray diffraction and scanning electron microscopy techniques were used. The low-temperature physical properties of the synthesized crystals were determined by means of magnetization, magnetic susceptibility, electrical resistivity and heat capacity measurements. For each compound but LuPtBi, the electrical resistivity varies in a semimetallic manner at high temperatures, and exhibits a metallic character at low temperatures. LuPtBi is metallic in the whole temperature range studied. The bismuthides HoPdBi, LuPdBi, LuPtBi and YPtBi were found superconducting below the critical temperature T_{c} = 0.7, 1.8, 0.9, and 0.96 K, respectively. For the compounds GdPdBi, DyPdBi and HoPdBi, an antiferromagnetic ordering was found to set in below T_{N} = 12.8, 3.7, and 1.9 K, respectively. HoPdBi is thus an intriguing material in which both cooperative phenomena coexist.
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EN
Single crystals of TbPdBi, a representative of the group of half-Heusler bismuthides, were studied by means of magnetic susceptibility, heat capacity, electrical resistivity, magnetostriction and thermal expansion measurements. The compound was characterized as an antiferromagnet with the Néel temperature T_{N} ≈5.3 K. Neutron diffraction experiment confirmed the antiferromagnetic ordering and yielded the propagation vector k=(1/2,1/2,1/2). Remarkably, this k vector is in accord with the recently developed theory of antiferromagnetic topological insulators.
4
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EN
Single-crystals of LuSb were investigated by means of electrical resistivity and magnetoresistance measurements. The compound was found to exhibit giant magnetoresistance exceeding 3000%, low-temperature resistivity plateau, and Shubnikov-de Haas oscillations. It was characterized as a semimetal with nearly balanced contributions of electron and hole carriers to the magnetotransport properties. The experimental findings, supported by the results of electronic structure calculations, proved that the magnetotransport in LuSb can be described in the scope of 3D multi-band Fermi surface model without topologically non-trivial electronic states.
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