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Interaction between Thin Films of Zinc and (100) GaAs

100%
Kamińska E., Piotrowska A., Żarecka R., Mizera E.
Acta Physica Polonica A
|
1993
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vol. 84
|
issue 3
527-529
EN
Interfacial reactions between thin films of Zn and GaAs were studied by means of transmission electron microscopy. Low-temperature interaction is governed by the penetration of Zn into the native oxide layer at the metal/GaAs interface. At 360°C the formation of Zn_{3}As_{2} phase, highly oriented with respect to the (100) substrate takes place.
2
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Interfacial Reactions between Thin Films of Zinc and (100)InP

88%
Kamińska E., Piotrowska A., Barcz A., Mizera E., Dynowska E.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 4
771-774
EN
The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and trans­mission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn_{3}P_{2} phase lattice matched to InP.
3
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Atomic Scale Morphology of Thin Au(Zn)/GaAs Ohmic Contacts

76%
Kamińska E., Piotrowska A., Żarecka R., Barcz A., Mizera E., Kwiatkowski S.
Acta Physica Polonica A
|
1992
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vol. 82
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issue 5
853-856
EN
Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very close vicinity of the interface.
4
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Identification of Residual Impurities in Si-Doped MBE Grown GaAs

64%
Kaniewska M., Regiński K., Kaniewski J., Muszalski J., Ornoch L., Adamczewska J., Marczewski J., Bugajski M., Mizera E.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 4
775-778
EN
The changes of dopant vaporization enthalpy in GaAs:Si grown by mole­cular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.
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