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1

Implantation of Rare-Earth Atoms into Si and III-V Compounds

100%

Kozanecki A., Langer J., Peaker A.

Acta Physica Polonica A

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1993

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vol. 83

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issue 1

59-70

EN

Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.

2

Lattice Sitting of Platinum Atoms in Diluted SiGe Alloys

76%

Dobaczewski L., Bonde Nielsen K., Nylandsted Larsen A., Lundsgaard Hansen J., Gościński K., Peaker A.

Acta Physica Polonica A

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1998

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vol. 94

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issue 2

297-299

EN

In this report we present high-resolution spectra obtained with a use of the Laplace transform deep level transient spectroscopy for platinum diffused into dilute (0-5% of Ge) SiGe alloys. Very significant changes are observed in the spectra associated with the transition metals as the germanium content is altered. We interpret these spectra in terms of the configurations of silicon and germanium atoms surrounding the transition metal. In order to explain the observed behaviour both the first and second nearest neighbour shells are considered.

3

Hole-Related Electrical Activity of InAs/GaAs Quantum Dots

76%

Kruszewski P., Dobaczewski L., Markevich V., Mitchell C., Missous M., Peaker A.

Acta Physica Polonica A

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2008

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vol. 114

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issue 5

1201-1206

EN

We present the hole-related electrical activity of the InAs quantum dots embedded in the n-type GaAs. We performed our experiments with the use of the Laplace and conventional deep level transient spectroscopies combined with the above GaAs band-gap illumination. We observed that depending on temperature and electric field the hole emission process is an interplay between the pure thermal emission and tunnelling processes. The tunnelling was quantitatively described by a simple model of the potential barrier.

4

Formation of the DX State by Donors in Al_{x}Ga_{1-x}As - Experiment

76%

Dobaczewski L., Kaczor P., Missous M., Żytkiewicz Z., Dobosz D., Peaker A.

Acta Physica Polonica A

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1992

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vol. 82

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issue 5

905-907

EN

A high-resolution Laplace-transform deep level transient spectroscopy was used to study electron emission from the DX centres related to group IV and VI donor elements in AlGaAs. This provides the experimental evidence that substitutional-interstitial atom motion is responsible for DX behaviour and for the associated metastability effects.

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4 Acta Physica Polonica A

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4 Peaker A.

3 Dobaczewski L.

2 Missous M.

1 Bonde Nielsen K.

1 Dobosz D.

1 Gościński K.

1 Kaczor P.

1 Kozanecki A.

1 Kruszewski P.

1 Langer J.

1 Lundsgaard Hansen J.

1 Markevich V.

1 Mitchell C.

1 Nylandsted Larsen A.

1 Żytkiewicz Z.

Implantation of Rare-Earth Atoms into Si and III-V Compounds

Lattice Sitting of Platinum Atoms in Diluted SiGe Alloys

Hole-Related Electrical Activity of InAs/GaAs Quantum Dots

Formation of the DX State by Donors in Al_{x}Ga_{1-x}As - Experiment