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Recombination Luminescence in Ca_{3-x}Cd_xGa₂Ge₃O₁₂ Garnets Doped with Eu³⁺ Ions

100%

Kostyk L., Luchechko A., Novosad S., Panasyuk M., Rudko M., Tsvetkova O.

Acta Physica Polonica A

2018

vol. 133

issue 4

943-947

The results of the investigations of X-ray excitation spectra, thermostimulated luminescence and influence of light illumination on the thermoluminescence glow curves of Eu³⁺-doped Ca_{3-x}Cd_xGa₂Ge₃O₁₂ garnet polycrystalline samples are presented. It is shown that Ca_{3-x}Cd_xGa₂Ge₃O₁₂ polycrystalline samples are characterized by intrinsic luminescence, which consists of several components. The nature of intrinsic luminescence is discussed. It is suggested that the nature of thermoluminescence glow peak near 150 K is connected with the [(V_{Ge}+V_{O})¯-F⁺] associations formed under X-ray irradiation at 85 K. The influence of light illumination on the TSL intensity of the preliminary X-ray irradiated samples is shown.

Structural Properties and Temperature Behaviour οf Optical Absorption Edge in Polycrystalline ZnO:X (Cu,Ag) Films

100%

Kulyk B., Figà V., Kapustianyk V., Panasyuk M., Serkiz R., Demchenko P.

Acta Physica Polonica A

2013

vol. 123

issue 1

92-97

Silver- and copper-doped ZnO films were prepared by radio-frequency magnetron sputtering on glass substrates. The influence of dopants content on the structural, morphological properties as well as on evolution of the optical absorption edge was considered. It has been found that Ag- and Cu-doped ZnO films are characterized by wurtzite crystalline structure with the preferred direction of crystalline orientation (002). The sizes of grains within the films were found to be dependent on the type of dopant. The temperature evolution of the optical absorption edge is described by the modified Urbach rule that reflects polycrystalline nature of the material. The corresponding parameters concerning electron- (exciton-) phonon interaction, phonon energies and temperature changes of the band-gap were determined and analysed.

High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

68%

Sadovyi B., Amilusik M., Staszczak G., Bockowski M., Grzegory I., Porowski S., Konczewicz L., Tsybulskyi V., Panasyuk M., Rudyk V., Karbovnyk I., Kapustianyk V., Litwin-Staszewska E., Piotrzkowski R.

Acta Physica Polonica A

2016

vol. 129

issue 1a

A-126-A-128

Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.

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3 Acta Physica Polonica A

1 2018

1 2016

1 2013

3 Panasyuk M.

2 Kapustianyk V.

1 Amilusik M.

1 Bockowski M.

1 Demchenko P.

1 Figà V.

1 Grzegory I.

1 Karbovnyk I.

1 Konczewicz L.

1 Kostyk L.

1 Kulyk B.

1 Litwin-Staszewska E.

1 Luchechko A.

1 Novosad S.

1 Piotrzkowski R.

1 Porowski S.

1 Rudko M.

1 Rudyk V.

1 Sadovyi B.

1 Serkiz R.

1 Staszczak G.

1 Tsvetkova O.

1 Tsybulskyi V.

Search results

Recombination Luminescence in Ca_{3-x}Cd_xGa₂Ge₃O₁₂ Garnets Doped with Eu³⁺ Ions

Structural Properties and Temperature Behaviour οf Optical Absorption Edge in Polycrystalline ZnO:X (Cu,Ag) Films

High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions