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1

Chemical Composition of Native Oxide Layers on In^{+} Implanted and Thermally Annealed GaAs

100%

Kulik M., Kołodyńska D., Żuk J., Komarov F., Filiks J.

Acta Physica Polonica A

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2013

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vol. 123

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issue 5

943-947

EN

Semi-insulating GaAs wafers have been implanted with 250 keV In^{+} ions at a fluence of 3 × 10^{16} cm^{-2}. The samples prepared in this way were subsequently annealed at a temperature of 600°C or 800°C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction O^{16}(α,α)O^{16} method. The chemical composition of native oxide layers on In^{+} implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. As_{2}O_{3}, As_{2}O_{5}, Ga_{2}O_{3}, GaAs, InAs and InAsO_4 compounds were detected in these layers.

2

Effect of N₂⁺ Ion Implantation and Thermal Annealing on Near-Surface Layers of Implanted GaAs

100%

Kulik M., Surowiec Z., Rzodkiewicz W., Filiks J., Drozdziel A.

Acta Physica Polonica A

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2015

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vol. 128

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issue 5

918-922

EN

The surface of semi-isolating GaAs (100) was irradiated with a fluence of 6×10¹⁷ cm¯² of the N₂⁺ ion beam; then, the samples were thermally annealed at temperatures of 500, 700, and 900°C for 2 h in an argon gas flow. The surface roughness of implanted samples was investigated with the help of atomic force microscopy. Numerous hillocks, which caused a significant increase in surface roughness, were observed. The spectroscopic ellipsometry method was used for determination of pseudo-dielectric functions of the near-surface layers in the investigated samples and the thickness of native oxides covering the irradiated surface. It was observed that the shapes of disorder spectra of the dielectric functions of near-surface layers of implanted GaAs partly returned to their original state after the thermal annealing.

3

Thermal Desorption of Krypton Implanted into Silicon

86%

Turek M., Droździel A., Wójtowicz A., Filiks J., Pyszniak K., Mączka D., Yuschkevich Y.

Acta Physica Polonica A

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2017

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vol. 132

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issue 2

249-253

EN

The thermal desorption spectrometry studies of krypton implanted Si samples are presented. Implantations (with the fluence 2×10¹⁶ cm¯²) were done with the energies 100, 150, and 200 keV. Additionally, a 200 keV and 100 keV Kr⁺G double implantation was performed. A sudden Kr release was observed in the ≈1100-1400 K range, most probably coming from the gas bubbles in cavities. The desorption activation energy varies from 2.5 eV (100 keV) to 0.8 (200 keV). The peak splitting suggests existence of two kinds of cavities trapping the implanted noble gas. Two Kr releases are observed for the 200 and 100 keV double-implanted samples. The peak shift of the release corresponding to 100 keV implantation could be a result of both introduced disorder and higher effective Kr concentration. The desorption activation energy is risen to ≈3.2 eV for both releases.

4

Production of Molybdenum and Tantalum Ion Beams using CCl₂F₂

73%

Turek M., Droździel A., Pyszniak K., Filiks J., Prucnal S., Mączka D., Vaganov Y., Węgierek P.

Acta Physica Polonica A

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2017

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vol. 132

|

issue 2

283-287

EN

A new method of refractory metal (like Mo and Ta) ion beam production using the arc discharge ion source and CCl₂F₂ (dichlorodifluoromethane) used as a feeding gas supported into the discharge chamber is presented. It is based on etching of the refractory metal parts (e.g. anode or a dedicated tube) Cl and F containing plasma. The results of measurements of the dependences of ion currents on the working parameters like discharge and filament currents as well as on the magnetic field flux density of an external electromagnet coil are shown and discussed. The separated Mo⁺ and Ta⁺ beam currents of approximately 22 μA and 2 μA, respectively, were obtained.

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4 Acta Physica Polonica A

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2 Kulik M.

2 Mączka D.

2 Pyszniak K.

2 Turek M.

1 Drozdziel A.

1 Komarov F.

1 Kołodyńska D.

1 Prucnal S.

1 Rzodkiewicz W.

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1 Vaganov Y.

1 Wójtowicz A.

1 Węgierek P.

1 Yuschkevich Y.

1 Żuk J.

Chemical Composition of Native Oxide Layers on In^{+} Implanted and Thermally Annealed GaAs

Effect of N₂⁺ Ion Implantation and Thermal Annealing on Near-Surface Layers of Implanted GaAs

Thermal Desorption of Krypton Implanted into Silicon

Production of Molybdenum and Tantalum Ion Beams using CCl₂F₂