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Pulsed Laser Evaporation and Epitaxy

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Acta Physica Polonica A
|
1991
|
vol. 80
|
issue 2
221-244
EN
The application of pulsed lasers for vaporization (ablation) of solid targets appears to be the most natural way to produce high purity fluxes of atoms/ions suitable for epitaxial growth of thin films. Since the early 1960's this unique approach has been the subject of steadily growing interest in the deposition of metals, dielectrics, semiconductors and since 1987, high-T_{c} superconductors. Laser induced target surface morphology changes, properties of laser induced vapours and pulsed deposition rate associated with the use of a pulsed laser for vacuum epitaxy are discussed. A pulsed laser evaporation and epitaxy (PLEE) system is described and the results of PLEE application for the growth of Cd_{1-x}Mn_{x}Te and CdTe-Cd_{1-x}Mn_{x}Te quantum well and superlattice structures are reviewed. Feasibility of PLEE in bandgap engineering is also discussed.
EN
A recently proposed magnetooptical method of determination of interface mixing was applied to CdTe/CdMnTe superstructures grown by pulsed laser evaporation and epitaxy. Diffusion length were found ≈ 5 Å for a multiple quantum well and > 15 Å for a superlattice. Ranges of Mn mole fractions and well width values enabling efficient application of the method were determined.
EN
The general review of the history and present-day situation of diluted magnetic semiconductor investigation in Ukraine is given by S. Ryabchenko. Some noteworthy results of diluted magnetic semiconductor investigation obtained in Ukraine are pointed out. The main features of the present day situation are mentioned also. As an example of last diluted magnetic semiconductor investigations, the new result obtained by Abramishvili, Komarov, Ryabchenko, Semenov, Kyrychenko and Dubowski for Cd_{1-x}Mn_{x}Te/CdTe/Cd_{1-x}Mn_{x}Te quantum well structures grown by laser ablation method are presented. A weak additional line was observed in the reflectivity spectra of a 27 Å wide quantum well with x= 0.11 in the barrier. Such additional line has not been observed in spectra of similar molecular beam epitaxy grown structures. Based on the theoretical computations of the energies and the relation of intensities of the main and additional lines we conclude that this line might be associated with hh2 → e1 transitions, which ceases to be forbidden in the presence of technologically caused asymmetry of quantum well potential profile.
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