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EN
We have studied magnetic properties of zinc-oxide composite doped with high concentration (up to 20%) of Co and Cr ions. The pulsed laser deposition method was used to obtain samples on quartz glass and sapphire substrates. Samples were annealed at 100-250°C for ZnO on quartz substrate, and 300-700°C on sapphire substrate. EMR measurements were carried out and temperature dependence of the EMR spectra was obtained. The angular dependence in two samples orientation, vertical and horizontal, were also obtained. Analysis of the temperature dependences of the integral intensity of EMR spectra was carried out using the Curie-Weiss law.
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EN
The EPR studies of CdTe:Cr were performed on X-band (9.6 GHz) spectrometer at room temperature. Single CdTe crystals were doped by chromium Cr in the synthesis process. The spectra observed were resolved into two spectra. The first one consisted of very broad line (Δ B=100 mT) and the second one showed a typical fine structure. The complete angular dependence measurements were obtained. The fine structure of Cr^{2+} or Cr^{3+} ions was assumed and simulated. It follows from the theoretical analysis of the obtained spectra that degree of ionization of the chromium Cr dopant is 3+.
EN
Models have been proposed explaining differences in electrophysical and photoelectrical properties of epitaxial films of Hg_{1-x}Cd_{x}Te (x≈0.2) before and after treating by single pulses of Nd:YAG laser. These models were obtained on the basis of the calculated distributions of temperature, temperature gradient and concentration of interstitial mercury during and after exposing to the laser pulse. These calculations were done using the net method.
EN
The results of experimental investigation of structural and physical properties of ZnO and ZnMnO films are presented in this work. The films of ZnO and Zn_{1-x}Mn_{x}O of different thickness were obtained on Al_{2}O_{3}, glass, and KCl substrates in vacuum of 1 × 10^{-5} Torr by the pulsed laser deposition method. The samples were obtained under the substrate temperature 300-473 K. A thickness of films was in the range of 0.5-1 μm depending on the number of laser pulses. The structure of target bulk materials was investigated by X-ray diffraction method. A structure of laser deposited films was investigated by the transmission high-energy electron diffraction method. Electric resistivity was measured in the temperature range 77-450 K. The presence of two activation energies in the temperature range 300-330 K and 330-450 K is followed from the analysis of the films electrical resistivity. These activation energies correspond to two deep donor's energy levels. The shallow donor's level is connected with manganese presence. Optical transmission of ZnO and ZnMnO films deposited at various temperatures were investigated.
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