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Pressure Investigation of Tunneling in an InAlAs-InGaAs Double Barrier Structure

100%

Cury L., Dmowski L., Celeste A., Portal J., Davies M., Heath M., Sivco D., Cho A.

Acta Physica Polonica A

1991

vol. 79

issue 2-3

199-202

AnIn_{0.52}Al_{0.48}As-In_{0.53}Ga_{0.47}As double-barrier structure was studied under hydrostatic pressures up to 15 kbar. Two resonances in the I(V) curves are observed. The possible tunneling mechanisms to interpret this effect are analysed.

Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap

100%

Teisseyre H., Perlin P., Leszczyński M., Suski T., Dmowski L., Grzegory I., Porowski S., Jun J., Moustakas T.

Acta Physica Polonica A

1995

vol. 87

issue 2

403-406

Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffraction methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10^{17} cm^{-3} for the layer and about 5 × 10^{19} cm^{-3} for the bulk crystal. The experiments revealed a different position of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.

Blue Laser on High N_2 Pressure-Grown Bulk GaN

62%

Grzegory I., Boćkowski M., Krukowski S., Łucznik B., Wróblewski M., Weyher J., Leszczyński M., Prystawko P., Czernecki R., Lehnert J., Nowak G., Perlin P., Teisseyre H., Purgał W., Krupczyński W., Suski T., Dmowski L., Litwin-Staszewska E., Skierbiszewski C., Łepkowski S., Porowski S.

Acta Physica Polonica A

2001

vol. 100

issue Supplement

229-232

In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).

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3 Acta Physica Polonica A

1 2001

1 1995

1 1991

3 Dmowski L.

2 Grzegory I.

2 Leszczyński M.

2 Perlin P.

2 Porowski S.

2 Suski T.

2 Teisseyre H.

1 Boćkowski M.

1 Celeste A.

1 Cho A.

1 Cury L.

1 Czernecki R.

1 Davies M.

1 Heath M.

1 Jun J.

1 Krukowski S.

1 Krupczyński W.

1 Lehnert J.

1 Litwin-Staszewska E.

1 Moustakas T.

1 Nowak G.

1 Portal J.

1 Prystawko P.

1 Purgał W.

1 Sivco D.

1 Skierbiszewski C.

1 Weyher J.

1 Wróblewski M.

1 Łepkowski S.

1 Łucznik B.

Search results

Pressure Investigation of Tunneling in an InAlAs-InGaAs Double Barrier Structure

Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap

Blue Laser on High N_2 Pressure-Grown Bulk GaN