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Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

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Li H., Sang J., Liu C., Lu H., Cao J.

Open Physics

2008

vol. 6

issue 3

638-642

Single crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga2O3 is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga2O3 and the main epitaxial relationship should be $$ (0001)_{ZnO} \parallel (001)_{Ga_2 O_3 } \parallel (0001)_{GaN} $$ and $$ [2 - 1 - 10]_{ZnO} \parallel [010]_{Ga_2 O_3 } \parallel [2 - 1 - 10]_{GaN} $$.

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1 Open Physics

1 2008

1 Cao J.

1 Li H.

1 Liu C.

1 Lu H.

1 Sang J.

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Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate