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1
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Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study

100%
Ochalski T., Żuk J., Vlasukova L.
Acta Physica Polonica A
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1997
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vol. 92
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issue 5
935-939
EN
We present a study of detailed line shapes of photoreflectance spectra for Al_{0.3}Ga_{0.7} As/SI-GaAs epitaxial layers grown by MBE. All measurements were performed at 80 K under UHV conditions with a special care for the samples surface quality. A set of the photoreflectance spectra was collected for photon energies close to the GaAs and Al_{0.3}Ga_{0.7}As band gaps (E_{0}). The photoreflectance spectra originated in the vicinity of the Al_{0.3}Ga_{0.7}As/SI-GaAs interface were analyzed using the complex Airy function model of Franz-Keldysh oscillations. To examine the effect of the epitaxial layer thickness on parameters characterizing the interface, a step-by-step chemical etching was applied for stripping the top layers. The built-in electric field intensity, field inhomogeneity and phenomenological broadening parameter for interface regions were determined as a function of the epilayer thickness.
2
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Nanocrystal- and Dislocation-Related Luminescence in~Si Matrix with InAs Nanocrystals

76%
Komarov F., Vlasukova L., Milchanin O., Mudryi A., Zuk J., Pyszniak K., Kulik M.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
204-207
EN
We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C. A part of the samples implanted at 25°C was additionally exposed to H_2^{+} ions (100 keV, 1.2 × 10^{16} cm^{-2} in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
3
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Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis

64%
Komarov F., Vlasukova L., Milchanin O., Mudryi A., Dunetz B., Wesch W., Wendler E., Karwat C.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
87-90
EN
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
4
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Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions

64%
Komarov F., Vlasukova L., Milchanin O., Greben M., Parkhomenko I., Mudryi A., Wendler E., Zukowski P.
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vol. 125
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issue 6
1288-1292
EN
Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
5
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Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers

52%
Komarov F., Vlasukova L., Milchanin O., Greben M., Komarov A., Mudryi A., Wesch W., Wendler E., Zuk J., Kulik M., Ismailova G.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
809-812
EN
Nanosized crystallites have been synthesized in the Si and SiO_2/Si structures by means of As (170 keV, 3.2 × 10^{16} cm^{-2}) and In (250 keV, 2.8 × 10^{16} cm^{-2}) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.
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