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Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

100%

Michalczewski K., Ivaldi F., Kubiszyn Ł., Benyahia D., Boguski J., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.

Acta Physica Polonica A

2017

vol. 132

issue 2

325-328

We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.

Structural, morphology and electrical properties of layered copper selenide thin film

84%

Ying Chyi Liew J., Talib Z., Mahmood W., Yunus M., Zainal Z., Halim S., Moksin M., Yusoff W., Pah Lim K.

Open Physics

2009

vol. 7

issue 2

379-384

Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

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1 Acta Physica Polonica A

1 Open Physics

1 2017

1 2009

1 Benyahia D.

1 Boguski J.

1 Halim S.

1 Ivaldi F.

1 Kubiszyn Ł.

1 Kębłowski A.

1 Mahmood W.

1 Martyniuk P.

1 Michalczewski K.

1 Moksin M.

1 Pah Lim K.

1 Piotrowski J.

1 Rogalski A.

1 Talib Z.

1 Ying Chyi Liew J.

1 Yunus M.

1 Yusoff W.

1 Zainal Z.

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Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

Structural, morphology and electrical properties of layered copper selenide thin film