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Electrical Properties and Magnetoresistance of Nanogranular SnO_2 Films

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Ksenevich V., Dovzhenko T., Dorosinets V., Bashmakov I., Melnikov A., Wieck A.
Acta Physica Polonica A
|
2008
|
vol. 113
|
issue 3
1043-1046
EN
Magnetotransport properties of the nanogranular SnO_2 films were invesigated. Non-linear current-voltage (I-V) characteristics were observed at low temperatures. The temperature dependence of the resistance and non-ohmic I-V curves can be well approximated by fluctuation-induced tunnelling model, indicating importance of the contacts barriers between SnO_2 grains. Magnetoresistance was measured within temperature range 2-15.3 K and could be consistent with the variable-range hopping conduction mechanism due to existence of localized states on the surface of SnO_2 grains.
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