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High-Temperature Scanning Tunnelling Spectroscopy of Transition Metal Oxides

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Klusek Z., Datta P., Kowalczyk P., Pierzgalski S., Busiakiewicz A., Olejniczak W., Basu A., Brinkman A.

Acta Physica Polonica A

2003

vol. 104

issue 3-4

245-258

In situ high-temperature scanning tunnelling spectroscopy measure-ments recorded on the heavily reduced TiO_2(110) surface which contains Ti_2O_3 regions showed disappearance of the energy gap accompanied by substantial decrease in amplitude of the band edge states with increasing temperature. It indicates smooth insulator-metal transition caused by bands overlap in Ti_2O_3, which takes place at elevated temperatures. In situ high-temperature scanning tunnelling microscopy and spectroscopy were used to study the influence of temperature on the electronic properties of Ni_xMn_{3-x}O_{3-δ} (0.4< x<1) thin films deposited by rf magnetron sputtering at three different oxygen/argon (2.5%, 10%, 15%) containing ambient. The morphology and distribution of the local density of states of the observed films did not show any difference for the films deposited at different conditions. The distribution of the local density of states was temperature dependent. The changes in the shape of the local density of states observed at 473 K were reversible with temperature implying that no permanent change of the electronic structure occurred.

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1 Acta Physica Polonica A

1 2003

1 Basu A.

1 Brinkman A.

1 Busiakiewicz A.

1 Datta P.

1 Klusek Z.

1 Kowalczyk P.

1 Olejniczak W.

1 Pierzgalski S.

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High-Temperature Scanning Tunnelling Spectroscopy of Transition Metal Oxides