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Design of Solar Cells p⁺/n Emitter by Spin-On Technique

100%

El Amrani A., Boucheham A., Belkacem Y., Boufenik R., Boudaa M.

Acta Physica Polonica A

2017

vol. 132

issue 3

717-719

In this paper spin-on dopant diffusion has been investigated as a technique for fabrication of p⁺/n monocrystalline silicon solar cell emitters. A homogeneous spreading onto the front wafer surface has been achieved by using 2 ml of boron-dopant solution and three-step spin-profile. Study of the wafers stacking arrangement has revealed that the highest doping level and the best emitter sheet resistance uniformity were obtained using the back-to-back wafers arrangement. The N₂/O₂ gas ratio variation during the diffusion process has shown that a higher percentage of nitrogen yields a slightly lower emitter sheet resistance. Study on temperature dependence of as-processed emitter resistivity revealed that 910°C results in targeted sheet resistance of around 48 Ω/sq. Using these preliminary experimental results, a batch of 6 silicon wafers was processed. After BSG and BRL chemical removal, the batch average sheet resistance of the emitter was 49.50 Ω/sq. The uniformity of a wafer and of the batch was below 7% and 13%, respectively. The ECV and SIMS depth profiling have shown the electrically active and the total boron surface concentration of 1.5× 10²⁰ atoms/cm³ and 2.5× 10²⁰ atoms/cm³, respectively. The junction depth was around 0.3 μm. Finally, by increasing the oxygen flow rate we reached an average sheet resistance of 51 Ω/sq. and a junction depth of 0.35 μm.

Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

52%

Zhang L., Zhang X., You W., Yang Z., Wang W., Ge Q., Liu Z.

Open Physics

2008

vol. 6

issue 2

283-288

The effects of Si, O, C and N ion implantation with different implantation doses on yellow luminescence (YL) of GaN have been investigated. The as-grown GaN samples used in the work were of unintentional doped n-type, and the photoluminescence (PL) spectra of samples had strong YL. The experimental results showed that YL of ion implanted samples exhibited marked reductions compared to samples with no implantation, while the near band edge (NBE) emissions were reduced to a lesser extent. The deep-level centers associated with YL may be produced in GaN films by O and C ion implantation, and identities of these deep-level centers were analyzed. It was also found that the dose dependence of YL was analogous with the one of the intensity ratios of YL to the near band edge (NBE) emission (I YL/I NBE) for ion implanted samples. The possible reason for this comparability has been proposed.

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1 Acta Physica Polonica A

1 Open Physics

1 2017

1 2008

1 Belkacem Y.

1 Boucheham A.

1 Boudaa M.

1 Boufenik R.

1 El Amrani A.

1 Ge Q.

1 Liu Z.

1 Wang W.

1 Yang Z.

1 You W.

1 Zhang L.

1 Zhang X.

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Design of Solar Cells p⁺/n Emitter by Spin-On Technique

Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN