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EN
Fe_{1-x}Cr_xSnSbO₆ solid solution shows semiconducting behaviour with the activation energy decreasing from E_{A}=0.64 eV for x=0.0 to E_{A}=0.32 eV for x=1.0 in the intrinsic conductivity temperature region as well as the n-type conduction at room temperature. The I-V characteristics and the conductance G at 300 and 400 K showed symmetrical and nonlinear behavior in the voltage range (-100, 100 V) suggesting the electron emission over the potential barrier especially for the boundary compounds FeSnSbO₆ and CrSnSbO₆. These effects are discussed in the context of the energy gap E_{g}>1.6 eV many times greater than the thermal energy kT.
EN
Fe_{1-x}Cr_xVSbO_6 solid solution is semiconductor with the activation energy decreasing both in the intrinsic and extrinsic conductivity temperature regions as the Cr-content increases. The n-type conduction is observed for Fe-richer samples while a change of the Seebeck coefficient (from n to p) - for Cr-richer ones. Magnetic isotherms for all samples of solid solution under study are characteristic of the universal Brillouin function, indicating paramagnetic response. These effects are discussed within the framework of the appearance of the mixed valence of both Fe and Cr ions.
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Semiconducting Properties of Cu_5SbO_6

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EN
Thermoelectric power, electrical resistivity, I-V characteristics, relative electrical permittivity, dc magnetization and ac magnetic susceptibility measurements carried out on Cu_5SbO_6 showed p-type semiconducting behaviour with the activation energy of 0.24 eV as well as ferrimagnetic order with the Néel temperature of 5.2 K. The effective magnetic moment of 5.857 μ_{B}/f.u. revealed the orbital contribution to the magnetic moment. Large value of the relative electrical permittivity indicated that the Cu^{2+} ions with the unscreened and unfilled electron shells are responsible for the polarizability and forming of electric dipoles.
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