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Characterization of the Band Bending in ZnSe-GaAs Heterojunctions by Raman Scattering

100%
Bała W., Drozdowski M., Kozielski M.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
225-228
EN
The band bending effect at the ZnSe-GaAs interface Was studied by means of Raman scattering induced by electric-field related to longitudinal-optical (LO) phonons. It has been shown that the variation of the band bending in GaAs can be modifled by changes in the electron concentration of ZnSe epilayer and the variation of the sample temperature.
2
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Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering

100%
Bala W., Drozdowski M., Kozielski M.
Acta Physica Polonica A
|
1991
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vol. 80
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issue 5
723-730
EN
Investigations of the strains at the n-ZnSe epilayers grown on GaAs substrate using polarized Raman spectra are presented. It has been shown that Raman scattering experiment can be used as a method for investigation of the splitting between the heavy- and light-hole bands in n-ZnSe thin films.
3
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Study of Misfit Dislocations Profiles in ZnSe/GaAs Structures by Raman Scattering

100%
Bała W., Drozdowski M., Kozielski M.
Acta Physica Polonica A
|
1993
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vol. 84
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issue 4
689-692
EN
In this paper we present the Raman scattering measurements of the ZnSe epilayers grown on (001) GaAs substrate by molecular beam epitaxy method. We have studied dependence of the frequency shift of LO(ZnSe) mode in the Raman spectra vs. thickness of the ZnSe layer. The intensity of LO(ZnSe)/LO(GaAs) ratio vs. orientation angle α of the E vector of the exciting light on the ZnSe/GaAs interface relatively to the sample orientation is presented too.
4
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Influence of Molecular Electric Fields on Elastic Properties of Perovskite-Like Substrates

100%
Hoffmann T. J., Drozdowski M., Kasprowicz D.
Acta Physica Polonica A
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1997
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vol. 92
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issue 1
187-190
EN
The dynamics of ABCO_{4} deformable crystals with electroelastic interacting was expressed by theoretical model with wave-linear approximation. The one-dimensional problem was considered assuming that the field variables are represented by plane electroelastic waves. As a result the dispersion equation for these crystals was obtained. Using this model the data concerning the elastic properties of SrLaGaO_{4} are discussed.
5
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Study of SrLaAlO_{4} and SrLaGaO_{4} Substrate Crystals by Raman Spectroscopy

100%
Drozdowski M., Kozielski M., Pajączkowska A.
Acta Physica Polonica A
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1997
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vol. 92
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issue 1
139-142
EN
In this paper the study of SrLaAlO_{4} and SrLaGaO_{4} single crystals using the Raman scattering method is presented. The obtained results are discussed in terms of nature of the crystallografic imperfections and point defects which might arise during the crystal growth process.
6
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Elastooptic Constants of SrLaAlO_{4} and SrLaGaO_{4} Single Crystals Determined by Brillouin Scattering

88%
Drozdowski M., Pajączkowska A., Kasprowicz D., Ziobrowski P., Gloubokov A.
Acta Physica Polonica A
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1997
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vol. 92
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issue 1
177-181
EN
In this paper we report the elastooptic constants p_{ij} of strontium lanthanum aluminate, SrLaAlO_{4} and strontium lanthanum gallate SrLaGaO_{4} single crystals, which were determined at room temperature using Brillouin scattering method. In order to investigate the elastooptic constants of SrLaAlO_{4} and SrLaGaO_{4} single crystals, a substitution method proposed by Cummins and Schoen, and developed by Nelson and Lax was used. The obtained results are also discussed in terms of the nature defects which might arise in these crystals during growth process.
7
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Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon

76%
Bala W., Głowacki G., Łukasiak Z., Drozdowski M., Kozielski M., Nossarzewska-Orłowska E., Brzozowski A.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
445-448
EN
Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p^{+} silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.
8
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Hyper-heuristics for cross-domain search

76%
Cichowicz T., Drozdowski M., Frankiewicz M., Pawlak G., Rytwinski F., Wasilewski J.
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2012
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issue 4
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