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Ion Beam Induced Darkening in Tetrahedral Amorphous Carbon Thin Films

100%

Sandulov M., Berova M., Tsvetkova T., Zuk J.

Acta Physica Polonica A

2015

vol. 128

issue 5

953-956

The samples of thin film (d ≈ 40 nm) tetrahedral amorphous carbon (ta-C), deposited by the filtered cathodic vacuum arc have been implanted with N⁺ at a fluence of 3×10¹⁴ cm¯² and ion energy E=20 keV. The induced structural modification of the implanted material results in a considerable change of its optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies as obtained from optical transmission measurements. This shift is accompanied by a considerable increase of the absorption coefficient (photodarkening effect) in the measured wavelength range (350÷2500 nm). These effects could be attributed to both the additional defect introduction and the increased graphitization, as confirmed by the X-ray photoelectron spectroscopy measurements. The optical contrast thus obtained (between implanted and unimplanted film materials) could be made use of in the area of high-density optical data storage using the focused ion beams.

Ion Beam Induced Surface Modification of ta-C Thin Films

76%

Berova M., Sandulov M., Tsvetkova T., Kitova S., Bischoff L., Boettger R.

Acta Physica Polonica A

2017

vol. 132

issue 2

299-301

Thin film samples (d ≈40 nm) of tetrahedral amorphous carbon (ta-C), deposited by filtered cathodic vacuum arc, were implanted with Ga⁺ at ion energy E =20 keV and ion fluences D=3×10¹⁴-3×10¹⁵ cm¯² and N⁺ with the same energy and ion fluence D=3×10¹⁴ cm¯². The Ga⁺ ion beam induced surface structural modification of the implanted material, displayed by formation of new phase at non-equilibrium condition, which could be accompanied by considerable changes in the optical properties of the ta-C films. The N⁺ implantation also results in modification of the surface structure. The induced structural modification of the implanted material results in a considerable change of its topography and optical properties. Nanoscale topography and structural properties characterisation of the Ga⁺ and N⁺ implanted films were performed using atomic spectroscopy analysis. The observed considerable surface structural properties modification in the case of the higher fluence Ga⁺ implanted samples results from the relatively high concentration of introduced Ga⁺ atoms, which is of the order of those for the host element.

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2 Acta Physica Polonica A

1 2017

1 2015

2 Berova M.

2 Sandulov M.

2 Tsvetkova T.

1 Bischoff L.

1 Boettger R.

1 Kitova S.

1 Zuk J.

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Ion Beam Induced Darkening in Tetrahedral Amorphous Carbon Thin Films

Ion Beam Induced Surface Modification of ta-C Thin Films