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Particle tunneling and scattering in a three-dimensional potential with a barrier

100%
Olkhovsky V., Petrillo V., Jakiel J., Kantor W.
Open Physics
|
2008
|
vol. 6
|
issue 1
122-127
EN
The particle tunneling through a 3-D rectangular potential barrier has been studied. The simplest model for multiple internal reflections has been assumed. The explicit expression for all the transmission and reflection probability amplitudes have been derived, as well as the tunneling and reflection phase times.
2
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Electronic transport mechanism in polydiacetylene crystals - variable range hopping or phonon-assisted tunnelling

76%
Pipinys P., Kiveris A.
Open Physics
|
2007
|
vol. 5
|
issue 1
83-90
EN
Experimental results on the current-voltage characteristics of polydiacetylene (PDA) single crystals reported by Aleshin et al [Phys. Rev. Vol. B 69, (2004) art. 214203] are reinterpreted in terms of the phonon-assisted electron tunnelling model. It is shown that the experimental results, measured in the temperature range from 1.8 K to 300 K are consistent with the tunnelling rate dependence on field strength, computed for the same range of temperatures. An advantage of this model over that of Aleshin et al, using the variable range hopping (VRH) model, is the possibility of describing the behaviour of I - V data measured at both high and low temperatures with the same set of parameters characterizing this material. This assertion is confirmed by comparison of the temperature-dependent current-voltage data extracted from Aleshin et al’s work with tunnelling rate dependence on temperature, computed using two different expressions of the phonon-assisted tunnelling theory. The temperature dependence of the conductivity of an ion implanted PDA crystals [B. S. Elman et al, Appl. Phys. Lett., Vol. 46, (1985) p. 100] and polypyrrole [P. Dutta et al, Synth. Met., Vol. 139 (2003) p. 201] are also explained on the basis of this model.
3
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On a current mechanism in Ta2O5 thin films

76%
Pipinys P., Rimeika A.
Open Physics
|
2008
|
vol. 6
|
issue 4
792-796
EN
Electrical conduction in the temperature range of 120–370 K has been studied in sandwiched structures of Al/Ta2O5/Si. The tantalum oxide films were prepared by evaporation of tantalum on a p-Si crystal substrate, followed by oxidation at a temperature of 600°C. The temperature-dependent current-voltage (I–V) characteristics are explained on the basis of a phonon-assisted tunnelling model. The same explanation is given for I–V data measured on Ta2O5 films by other investigators. From the comparison of experimental data with theory the density of states in the interface layer is derived and the electron-phonon interaction constant is assessed.
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