We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10^{18} cm^{-3}. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm^{2} V^{-1} s^{-1} at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.
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