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1
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Tailoring the Internal Evaporator for Effective Ion Beam Production - Volatile vs. Non-Volatile Substances

100%
Turek M., Droździel A., Pyszniak K., Prucnal S.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
939-942
EN
Two different designs of the internal evaporator in an arc discharge ion source are presented, suitable either for volatile, or high-melting point substances. A matter of the evaporator size and placement in order to obtain its appropriate temperature and, therefore, a stable and intense ion beam, is considered. Basic ion source characteristics, i.e. the dependences of ion current and discharge voltage on the discharge and filament currents as well as on the external magnetic field flux density are shown and discussed in order to find optimal working conditions. The results of measurements for both volatile (P, Zn, Se, S) and non-volatile (Pd) are presented, showing the applicability of the design for ion implantation purposes.
2
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Production of Mo^{+} Beams Using an Arc Discharge Ion Source

88%
Turek M., Droździel A., Pyszniak K., Prucnal S., Mączka D.
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vol. 125
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issue 6
1388-1391
EN
A new method of Mo^{+} ion beam production is presented in the paper. The method bases on the chemical sputtering/etching of the molybdenum parts (e.g. anode) of the arc discharge ion source by the chloride containing plasma. A mixture of CCl_4 (or CHCl_3) vapor and air was used as the feeding substance. The separated Mo^{+} beam current of approximately 18 μA was achieved. The measurements of the ion current dependences on the discharge and filament currents as well as on the magnetic field flux density from the electromagnet surrounding the discharge chamber were performed in order to find the optimal working parameters of the ion source.
3
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Production of Doubly Charged Ions Using a Hollow Cathode Ion Source with an Evaporator

88%
Turek M., Droździel A., Pyszniak K., Mączka D., Słowiński B.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
843-846
EN
The paper describes the production of doubly charged ions from solids and gases using a hollow cathode ion source with an internal evaporator heated by a spiral cathode filament and arc discharge. The obtained currents were 15 μA for Bi^{2+}, 10 μA for As^{2+} and Al^{2+}, 8 μA for Kr^{2+} and Xe^{2+}, 5 μA for In^{2+} and Ge^{2+}, enabling moderate dose implantations ( ≈ 10^{15} cm^{-3}) with doubly charged ions. Characteristics of the ion source are presented and discussed in order to choose the optimal working parameters. A brief presentation of numerical model of doubly and singly charged ions in the ion source is given. The calculated results (dependences of ion current on the anode voltage) are in good agreement with the experimental data.
4
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Mechanical Properties of the Stellite 6 Cobalt Alloy Implanted with Nitrogen Ions

88%
Budzyński P., Kamiński M., Wiertel M., Pyszniak K., Droździel A.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
203-205
EN
The effect of nitrogen ion implantation on Stellite 6 cobalt alloy was investigated. In this research, cobalt alloy was implanted with 65 keV nitrogen ions at the fluence of (1÷10)×10¹⁶ N⁺/cm². The distribution of implanted nitrogen ions and vacancies produced by them was calculated using the SRIM program. The surface morphology was examined and the elemental analysis was performed using scanning electron microscopy, energy dispersive X-ray spectroscopy and grazing incidence X-ray diffraction. The wear tests were conducted with the use of the pin-on-disc method. The results demonstrate that implantation with nitrogen ions significantly reduces the friction factor and wear. The friction coefficient of the implanted sample at the fluence of 1×10¹⁷ N⁺/cm² increased to the values characteristic of an unimplanted sample after 5000 measurement cycles. The depth of the worn trace was about 2.0 μm. This implies that the thickness of the layer modified by the implantation process is ≈2.0 μm and exceeds the initial range of the implanted ions by an order of magnitude. This is referred to as a long-range implantation effect. The investigations have shown that the long-range effect is caused by movement of not only implanted nitrogen atoms but also carbon dopant atoms towards the friction zone. Diffusion of carbon atoms has been documented here for the first time. Furthermore, the increased content of oxygen atoms on the track bottom indicates a dominant oxidative wear of the Stellite samples after nitrogen implantation with the energy 65 keV and the fluences of 5×10¹⁶ and 10¹⁷ N⁺/cm².
5
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Plasma Ion Source with an Internal Evaporator

88%
Turek M., Droździel A., Pyszniak K., Prucnal S., Mączka D.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
184-187
EN
A new construction of a hollow cathode ion source equipped with an internal evaporator heated by a spiral cathode filament and arc discharge is presented. The source is especially suitable for production of ions from solids. The proximity of arc discharge region and extraction opening enables production of intense ion beams even for very low discharge current (I_{a} = 1.2 A). The currents of 50 μA (Al^{+}) and 70 μA (Bi^{+}) were obtained using the extraction voltage of 25 kV. The source is able to work for several tens of hours without maintenance breaks, giving possibility of high dose implantations. The paper presents the detailed description of the ion source as well as its experimental characteristics like dependences of extracted currents and anode voltage on anode and cathode currents.
6
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Thermal Desorption of Krypton Implanted into Silicon

76%
Turek M., Droździel A., Wójtowicz A., Filiks J., Pyszniak K., Mączka D., Yuschkevich Y.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
249-253
EN
The thermal desorption spectrometry studies of krypton implanted Si samples are presented. Implantations (with the fluence 2×10¹⁶ cm¯²) were done with the energies 100, 150, and 200 keV. Additionally, a 200 keV and 100 keV Kr⁺G double implantation was performed. A sudden Kr release was observed in the ≈1100-1400 K range, most probably coming from the gas bubbles in cavities. The desorption activation energy varies from 2.5 eV (100 keV) to 0.8 (200 keV). The peak splitting suggests existence of two kinds of cavities trapping the implanted noble gas. Two Kr releases are observed for the 200 and 100 keV double-implanted samples. The peak shift of the release corresponding to 100 keV implantation could be a result of both introduced disorder and higher effective Kr concentration. The desorption activation energy is risen to ≈3.2 eV for both releases.
7
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Thermal Desorption of Helium from Defected Silicon

64%
Turek M., Droździel A., Pyszniak K., Wójtowicz A., Mączka D., Yuschkevich Y., Vaganov Y., Żuk J.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
849-852
EN
The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 10¹⁶ cm¯². Additionally, the influence of Si pre-implantation (fluences in the range 10¹⁴-10¹⁶ cm¯², E=260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 10¹⁵ cm¯², while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 10¹⁶ cm¯².
8
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III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing

64%
Prucnal S., Turek M., Gao K., Zhou S., Pyszniak K., Droździel A., Żuk J., Skorupa W.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
935-938
EN
Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in SiO_2 and Si_3N_4 made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
9
Content available remote

Production of Molybdenum and Tantalum Ion Beams using CCl₂F₂

64%
Turek M., Droździel A., Pyszniak K., Filiks J., Prucnal S., Mączka D., Vaganov Y., Węgierek P.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
283-287
EN
A new method of refractory metal (like Mo and Ta) ion beam production using the arc discharge ion source and CCl₂F₂ (dichlorodifluoromethane) used as a feeding gas supported into the discharge chamber is presented. It is based on etching of the refractory metal parts (e.g. anode or a dedicated tube) Cl and F containing plasma. The results of measurements of the dependences of ion currents on the working parameters like discharge and filament currents as well as on the magnetic field flux density of an external electromagnet coil are shown and discussed. The separated Mo⁺ and Ta⁺ beam currents of approximately 22 μA and 2 μA, respectively, were obtained.
10
Content available remote

Modification of Optical and Electrical Properties of PET Foils by He⁺, Ne⁺ and Ar⁺ Implantation

64%
Droździel A., Turek M., Pyszniak K., Prucnal S., Luchowski R., Grudziński W., Klimek-Turek A., Partyka J.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
264-269
EN
Thin (3 μm) polyethylene terephthalate (PET) foils were irradiated with 135 keV He⁺, Ne⁺ and Ar⁺ ions with the fluences up to 5×10¹⁵ cm¯². Changes of chemical structure of the polymer were studied with the Fourier transform infrared and Raman spectroscopy - breaking of numerous chemical bonds, polymer chain cross-linking as well as formation of sp² hybridised carbon clusters and cluster networks were demonstrated. The increase of the implanted sample absorbance with the implantation fluence in the UV-VIS spectra as well as the decrease of optical band-gap energy (2.75 and 2.0 eV for He and Ne, respectively, at 5×10¹⁵ cm¯²) are observed. Decrease of bulk resistance of heavily treated samples by ≈5 orders of magnitude is determined. Measurements of the sheet resistance confirm that the sample becomes conducting also on the reverse (unimplanted) side of the foil. Both of these effects depend on the impinging ion mass - they are the strongest for Ar. The increase of both ac conductance and dielectric constant is observed in the frequency range up to 2 MHz and these changes rise with the impinging ion mass.
11
Content available remote

Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide

64%
Rawski M., Żuk J., Kulik M., Droździel A., Lin L., Prucnal S., Pyszniak K., Turek M.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
192-195
EN
Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C Al^{+} ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.
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