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1
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Acoustic Phonon Activated and Assisted Tunnelling in Ge:Sb,P

100%
Žurauskienė N., Dargys A.
Acta Physica Polonica A
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1996
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vol. 90
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issue 5
993-996
EN
The influence of lattice vibrations on the field ionization rate of shallow donors in germanium at low lattice temperatures is investigated experimentally and theoretically. The role played by acoustic phonons in the tunnelling of electrons from the ground donor level (phonon assisted tunnelling) and through the excited donor levels (phonon activated tunnelling) is considered. Both processes are shown to enhance the tunnelling rate.
2
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Investigation of Magnetoresistance and Its Anisotropy of Thin Polycrystalline La_{0.83}Sr_{0.17}MnO_3 Films in High Pulsed Magnetic Fields

81%
Žurauskienė N., Keršulis S., Medišauskas L., Tolvaišienė S.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
186-188
EN
The results on the study of grain boundary effects and influence of film deposition conditions on the magnetoresistance and its anisotropy in polycrystalline La_{0.83}Sr_{0.17}MnO_3 films are presented. The magnetoresistance was measured in high pulsed magnetic fields up to 25 T (pulse duration ≈ 0.6 ms) in the temperature range of 120-300 K. A modified Mott hopping model was applied to describe the main behavior of high-field magnetoresistance for both ferromagnetic and paramagnetic phases of the polycrystalline films by taking into account the demagnetization field of the films measured in low magnetic fields perpendicular to film plane. It was also found that to obtain the higher magnetoresistance saturation field at room temperature it is necessary to use the films with smaller crystallites (D ≈ 100 nm). Such films could be used for design of megagauss pulsed magnetic field sensors.
3
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Field Ionization of Shallow Acceptors

81%
Dargys A., Žurauskas S., Žurauskienė N.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
629-632
EN
Experimental studies on hole tunneling from the substitutional boron impurity into degenerate valence band of silicon single crystals are presented. The results are interpreted within the framework of acceptor ground state quartet splitting into the Kramers doublet due to presence of random strains and electric field in the lattice.
4
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Optically Detected Microwave Resonance and Carrier Dynamics in InAs/GaAs Quantum Dots

62%
Žurauskienė N., Marcinkevičius S., Janssen G., Goovaerts E., Nötzel R., Koenraad P., Wolter J.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
435-439
EN
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied by means of optically detected microwave resonance spectroscopy and time resolved photoluminescence techniques. The results are discussed in terms of trapping and thermal escape of the carriers as well as their relaxation and recombination in quantum dots. The data are compared with those recently obtained on shallowly formed InAs quantum dot structures.
5
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Influence of Sr Content on CMR Effect in Polycrystalline La_{1-x}Sr_{x}MnO_{3} Thin Films

62%
Žurauskienė N., Balevičius S., Stankevič V., Paršeliūnas J., Keršulis S., Abrutis A., Plaušinaitienė V.
Acta Physica Polonica A
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2009
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vol. 115
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issue 6
1136-1138
EN
The magnetoresistance of thin polycrystalline La_{1-x}Sr_{x}MnO_{3} films deposited on lucalox substrate using metal organic chemical vapor deposition technique was investigated in pulsed magnetic fields up to 18 T in the temperature range 100-320 K. The influence of film preparation conditions, ambient temperature variation and Sr content is analyzed in order to determine the optimal conditions for the design of CMR-B-scalar magnetic field sensor based on thin manganite film, operating at room temperature.
6
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Numerical Magneto-Mechanical Analysis of Destructive Coils with Reinforcement Cylinders of Various Thicknesses

62%
Kačianauskas R., Kačeniauskas A., Stupak E., Balevičius S., Žurauskienė N., Novickij J.
Acta Physica Polonica A
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2009
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vol. 115
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issue 6
1144-1145
EN
The destructive laboratory device, generating half-period sinus-shaped magnetic field pulses of 0.15-2 ms duration is investigated numerically. The coil was placed into a steel reinforcement cylinder to resist magnetic forces, while influence of thickness of the reinforcement cylinder is considered in detail. The time-dependent non-linear magneto-mechanical model and the finite element software ANSYS are employed. On the basis of the mechanical analysis, reasonable explanation of the destruction nature is provided. The numerically obtained operation threshold value was in good agreement with experimental measurements.
7
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High Pulsed Magnetic Field Sensor Based on La-Ca-Mn-O Thin Polycrystalline Films

62%
Balevičius S., Žurauskienė N., Stankevič V., Keršulis S., Novickij J., Altgilbers L., Clarke F.
Acta Physica Polonica A
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2005
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vol. 107
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issue 1
207-210
EN
It is demonstrated that polycrystalline La_{0.33}Ca_{0.67}MnO_3 thin film sensors can be used to measure pulsed strong magnetic fields with microsecond duration rise and decay times. The response characteristics of these sensors were investigated using 0.7-1.0 ms duration bell-shaped magnetic field pulses of 10-20 T amplitudes and by using special waveform magnetic field pulses with amplitudes of 40 T and decay times of 50μs. The response of these magnetic field sensors was compared with those of conventional loop sensors and Faraday rotation sensors using Bi_{12}SiO_{20} single crystals as a known standard.
8
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Measurement of the Magnetic Field Distribution in Railguns Using CMR-B-Scalar Sensors

62%
Liebfried O., Schneider M., Loeffler M., Balevičius S., Žurauskienė N., Stankevič V.
Acta Physica Polonica A
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2009
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vol. 115
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issue 6
1125-1127
EN
Colossal magnetoresistance effect B-scalar magnetic field sensors with effective areas of 0.05 mm^2 were used very close to the rails for magnetic field measurements. These measurements were performed during static and dynamic railgun experiments. In static experiments three different rail materials were used and the results are compared to a finite element simulation.
9
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Electroresistance of La-Ca-MnO Thin Films

52%
Cimmperman P., Stankevič V., Žurauskienė N., Balevičius S., Anisimovas F., Paršeliūnas J., Kiprijanovič O., Altgilbers L.
Acta Physica Polonica A
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2004
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vol. 105
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issue 1-2
107-114
EN
Epitaxial, textured, and polycrystalline La_{0.7}Ca_{0.3}Mn O_3 films, having about 150 nm thickness, were prepared by pulsed laser deposition techniques onto (110) NdGaO_3, MgO and lucalox substrates and investigated using 10 ns duration, 0.5 ns rise time electrical pulses having amplitude up to 500 V. Electroresistance of the films [R(E)-R(0)]/R(0) was investigated up to 80 kV/cm electric field strengths in temperatures ranging from 300 K to 4.2 K. Strong (up to 93%) negative electroresistance was obtained in polycrystalline La_{0.7}Ca_{0.3}MnO_3 films prepared on MgO and lucalox substrates. The epitaxial films grown on NdGaO_3 substrate demonstrated only a small resistance change due to Joule heating induced by a current pulse. It was concluded that electroresistance manifests itself in strongly inhomogeneous manganites films exhibiting a large number of structural imperfections producing ferromagnetic tunnel junction nets.
10
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Fast Electrical Switching of Thin Manganite Films

52%
Balevičius S., Kiprijanovič O., Stankevič V., Žurauskienė N., Česnys A., Tolvaišienė S., Abrutis A., Plaušinaitienė V.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
821-824
EN
The effects of strong pulsed electric field on the electrical properties of thin epitaxial La_{0.7}Sr_{0.3}MnO_3 films were investigated. The fast electrical switching from high resistance off-state to low resistance on-state was obtained at current densities higher than 10^6 A/cm^2. This current was able to induce an irreversible damage of the sample in the regions at the edges of the electrodes of the film. It was demonstrated that thermal effects are responsible for appearance of delay time and asymmetrical shape of current channel in on-state, however, the fast switching from off- to on-state is a result of electronic effects appearing when critical power is reached in the film.
11
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Thin Film Manganite-Metal Interconnection and "Loop Effect" Studies in CMR-Based High Magnetic Field Sensors

52%
Balevičius S., Stankevič V., Žurauskienė N., Šimkevičius Č., Liebfried O., Löffler M., Schneider M., Abrutis A., Plaušinaitienė V.
Acta Physica Polonica A
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2009
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vol. 115
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issue 6
1133-1135
EN
The design, technology and main characteristics of Ag contacts as well as "loop effect" peculiarities of colossal magnetoresistance B-scalar high magnetic field sensor based on La_{1-x}(Ca)Sr_x MnO_3 films used for measuring high magnetic field pulses are presented.
12
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Magneto- and Electroresistance of Ultrathin Anisotropically Strained La-Sr-MnO Films

52%
Balevičius S., Stankevič V., Žurauskienė N., Šimkevičius Č., Paršeliūnas J., Cimmperman P., Abrutis A., Plaušinaitienė V.
Acta Physica Polonica A
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2005
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vol. 107
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issue 1
203-206
EN
The magnetoresistance anisotropy of ultrathin La_{0.83}Sr_{0.17}Mn O_3 films deposited on NdGaO_3 substrate by metalorganic chemical vapour deposition technique was investigated. The electric-field-induced resistance change was studied up to electric fields of 10 kV/cm using ns duration electrical pulses. It was found that in ultrathin (< 10 nm) and thin (< 50 nm) films the origin of electric-field-induced resistance change is thermal. However, the films with thicknesses of about 20 nm, exhibit negative electric-field-induced resistance change, having a pure electronic nature. This effect is explained in terms of two-layer systems with imperfections located at the interface between the layers.
13
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Frequency Dependence of Electrical Response of Polycrystalline LCMO Thin Films

52%
Ašmontas S., Anisimovas F., Balevičius S., Cimmperman P., Gradauskas J., Lučun A., Stankevič V., Sužiedėlis A., Vengalis B., Žurauskienė N.
Acta Physica Polonica A
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2005
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vol. 107
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issue 1
193-197
EN
Influence of strong electric field in wide frequency range (from DC to 35 GHz) on electrical resistance of thin La_{0.67}Ca_{0.33}MnO_3 polycrystalline manganite films was investigated in the range of (78÷300) K. Different behavior of resistance change vs. temperature was observed when pulsed DC electric field and microwaves were applied to the films. When pulsed DC electric field is applied the electric-field-induced resistance change ("electroresistance") of manganite film depended nearly monotonically on temperature. However, in microwave electric fields a non-monotonic character of the electroresistance temperature dependence was observed. The dependence of the electroresistance on quality of manganite films was observed in case of microwaves. The experimental findings are explained assuming different electrical current mechanisms in case of DC and microwave fields. The applied voltage drops mainly across the grains of polycrystalline film due to a presence of displacement currents in case of microwaves, whereas in DC case the voltage drop is across the grain boundaries.
14
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Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

42%
Požela K., Požela J., Jucienė V., Vasil'evskii I., Galiev G., Klimov E., Sužiedėlis A., Žurauskienė N., Stankevič V., Keršulis S., Paškevič Č.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
170-172
EN
The following peculiarities of electron transport in In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As quantum wells with δ-Si-doped In_{0.52}Al_{0.48}As barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As quantum well, as well as increasing the InAs content in the modulation-doped In_{0.8}Ga_{0.2}As/In_{0.7}Al_{0.3}As heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
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