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CdSe Layers of Below Critical Thickness in ZnSe Matrix: Intrinsic Morphology and Defect Formation

100%
Sedova I., Shubina T., Sorokin S., Sitnikova A., Toropov A., Ivanov S., Willander M.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
519-525
EN
Three main stages of the intrinsic morphology transformation of MBE grown CdSe fractional monolayers in ZnSe with increase in their nominal thickness w in the 0.1-3.0 monolayer range were found using both structural and optical characterization techniques. Emergence of the extended (15-30 nm) CdSe-enriched quantum-dot-like pseudomorphic islands at w>0.7 monolayer with the density increasing up to 2.5×10^{10} cm^{-2} at w=2.8 monolayer is clearly displayed in the optical properties of CdSe fractional monolayer nanostructures. The below critical thickness CdSe fractional monolayers having extremely high quantum efficiency can be very perspective as an active region of ZnSe-based blue-green lasers.
2
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Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

100%
Mizerov A., Jmerik V., Kaibyshev V., Komissarova T., Masalov S., Sitnikova A., Ivanov S.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1253-1258
EN
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O₃ substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(0001̅) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(0001̅) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature T_S ≈ 760°C and Ga to activated nitrogen flux ratio F_Ga/F_N* ≈ 1.8.
3
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InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy

100%
Semenov A., Solov'ev V., Meltser B., Lyublinskaya O., Terent'ev Y., Sitnikova A., Ivanov S.
Acta Physica Polonica A
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2005
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vol. 108
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issue 5
859-865
EN
We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4μm. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ga)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5μm has been observed at 80 K.
4
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Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface

100%
Klimko G., Evropeytsev E., Sitnikova A., Gronin S., Sedova I., Sorokin S., Ivanov S.
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vol. 126
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issue 5
1184-1186
EN
The studies of structural and optical properties of molecular beam epitaxy grown pseudomorphic hybrid structures with AlGaAs/GaAs quantum well placed closely to the GaAs/ZnSe heterointerface are presented. The interfaces were formed in different ways (Zn or Se initial GaAs surface exposure, different growth temperature and ZnSe growth mode) on As-rich c(4×4) and (2×4) GaAs surfaces. It has been demonstrated that the photoluminescence intensity from the near-heterointerface GaAs QW is influenced most significantly by the procedure of ZnSe growth initiation. The bright photoluminescence (77 K) from the near-interface GaAs quantum well is observed if the Se-decoration procedure is used during the GaAs/ZnSe heterointerface formation on (2×4)As GaAs surface. It reduces noticeably if the GaAs reconstruction changes to c(4×4)As and disappears completely when Zn pre-exposure of GaAs surface is used. These effects are discussed in terms of different ratio of Ga-Se and As-Zn bonds at the GaAs/ZnSe heterointerface resulting in different band offsets and/or uncompensated built-in electric fields.
5
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Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix

84%
Mukhin M., Terent'ev Y., Golub L., Nestoklon M., Meltser B., Semenov A., Solov'ev V., Sitnikova A., Toropov A., Ivanov S.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
868-869
EN
Magneto-optical properties of type II heterostructures with InSb/InAs quantum dots has been studied at external magnetic field applied in the Faraday geometry. The emission polarization degree can be changed in the range from 100% σ-minus to 10% σ-plus due to excitation intensity and temperature variation. The detailed calculation of the band structure within a tight-binding approximation is presented. The simulation of the experimental data reveals that the oscillator strength of the optical transitions involving electrons with the spin oriented along and opposite to the magnetic field vector differs by approximately 1.8 times in the heterostructures under study.
6
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Structural and Optical Properties of Alternately-Strained ZnS_{x}Se_{1-x}/CdSe Superlattices with Effective Band-Gap 2.5-2.6 eV

84%
Evropeytsev E., Sorokin S., Gronin S., Sedova I., Klimko G., Sitnikova A., Baidakova M., Ivanov S., Toropov A.
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vol. 126
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issue 5
1156-1158
EN
We report on design and fabrication of alternately-strained ZnS_xSe_{1-x}/CdSe short period superlattices with the effective band-gap 2.52, 2.58, and 2.61 eV and the total thickness ≈300 nm. Transmission electron microscopy, X-ray diffraction, and photoluminescence measurements reveal negligibly small density of misfit dislocations in the superlattices. The investigation of carrier transport along the superlattice growth axis, performed by the photoluminescence measurements of a superlattice with one enlarged quantum well, confirms efficient Bloch-type transport at temperatures above ≈ 100 K. Such superlattices look promising for the applications as a material for the wide band-gap photoactive region of a multi-junction solar cell comprising both III-V and II-VI materials.
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