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Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction

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Popov A. A., Imenkov A. N., Kolchanova N. M., Yakovlev Y. P., Piotrowski T. T.
Acta Physica Polonica A
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1995
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vol. 87
|
issue 2
559-562
EN
The recombination nearby large band-offset staggered lineup N-GaSb/n-GaInAsSb heterojunction was investigated by means of the elec­troluminescence and carrier lifetime measurements. It was demonstrated that the nature of recombination, tuning rate as well as relation between radiative and non-radiative recombination strongly depend on the N-n band-offset and that its increase improves the carrier localization on the N-n interface.
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