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Thermal Desorption of Krypton Implanted into Silicon

100%

Turek M., Droździel A., Wójtowicz A., Filiks J., Pyszniak K., Mączka D., Yuschkevich Y.

Acta Physica Polonica A

2017

vol. 132

issue 2

249-253

The thermal desorption spectrometry studies of krypton implanted Si samples are presented. Implantations (with the fluence 2×10¹⁶ cm¯²) were done with the energies 100, 150, and 200 keV. Additionally, a 200 keV and 100 keV Kr⁺G double implantation was performed. A sudden Kr release was observed in the ≈1100-1400 K range, most probably coming from the gas bubbles in cavities. The desorption activation energy varies from 2.5 eV (100 keV) to 0.8 (200 keV). The peak splitting suggests existence of two kinds of cavities trapping the implanted noble gas. Two Kr releases are observed for the 200 and 100 keV double-implanted samples. The peak shift of the release corresponding to 100 keV implantation could be a result of both introduced disorder and higher effective Kr concentration. The desorption activation energy is risen to ≈3.2 eV for both releases.

Biodegradation of TPS mouldings enriched with natural fillers

100%

Oniszczuk T., Wójtowicz A., Mitrus M., Mościcki L., Combrzyński M., Rejak A., Gładyszewska B.

Teka Commission of Motorization and Power Industry in Agriculture

2012

issue 2

Thermal Desorption of Helium from Defected Silicon

84%

Turek M., Droździel A., Pyszniak K., Wójtowicz A., Mączka D., Yuschkevich Y., Vaganov Y., Żuk J.

Acta Physica Polonica A

2015

vol. 128

issue 5

849-852

The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 10¹⁶ cm¯². Additionally, the influence of Si pre-implantation (fluences in the range 10¹⁴-10¹⁶ cm¯², E=260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 10¹⁵ cm¯², while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 10¹⁶ cm¯².

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2 Acta Physica Polonica A

1 Teka Commission of Motorization and Power Industry in Agriculture

1 2017

1 2015

1 2012

3 Wójtowicz A.

2 Droździel A.

2 Mączka D.

2 Pyszniak K.

2 Turek M.

2 Yuschkevich Y.

1 Combrzyński M.

1 Filiks J.

1 Gładyszewska B.

1 Mitrus M.

1 Mościcki L.

1 Oniszczuk T.

1 Rejak A.

1 Vaganov Y.

1 Żuk J.

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Thermal Desorption of Krypton Implanted into Silicon

Biodegradation of TPS mouldings enriched with natural fillers

Thermal Desorption of Helium from Defected Silicon