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Optical Absorption and Reflection Studies of Tl_4InGa_3S_8 Layered Single Crystals

100%
Goksen K., Gasanly N., Ozkan H.
Acta Physica Polonica A
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2007
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vol. 112
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issue 1
93-100
EN
The optical properties of Tl_4InGa_3S_8 layered single crystals have been studied by means of transmission and reflection measurements in the wavelength region between 400 and 1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.40 and 2.61 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed the rate of change of the indirect band gap with temperature asγ=-6.0×10^{-4} eV/K. The absolute zero value of the band gap energy was obtained as E_{gi}(0)= 2.52 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength, and zero-frequency refractive index were found to be 5.07 eV, 26.67 eV, 8.82×10^{13} m^{-2}, and 2.50, respectively.
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Excitation and Temperature Tuned Photoluminescence in Tl_2In_2S_3Se Layered Crystals

100%
Guler I., Goksen K., Gasanly N.
Acta Physica Polonica A
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2006
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vol. 110
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issue 6
823-831
EN
Photoluminescence spectra of Tl_2In_2S_3Se layered single crystals have been studied in the wavelength region of 535-725 nm and in the temperature range of 22-58 K. Two photoluminescence bands centered at 564 (2.20 eV, A-band) and 642 nm (1.93 eV, B-band) were observed at T = 22 K. Variations of both bands have been investigated as a function of excitation laser intensity in the range from 16 to 516 mW cm^{-2}. These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located 0.02 and 0.01 eV below the bottom of conduction band to acceptor levels located 0.05 and 0.44 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the photoluminescence spectra, respectively.
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