In this paper a composite structure, topography, wettability and nanohardness of a (100) Si surface modified by means of ion-assisted deposition of metal (Me) coatings in conditions of a self-irradiation are discussed.
PbSnS thin films were prepared by hot-wall vacuum evaporation. The Rutherford backscattering technique was employed for the investigation of Pb_{x}Sn_{1 - x}S thin films composition. With a help of atomic force microscopy the main stages in the development of the thin films were characterized. Contact angle measurements of water drop on Pb_{x}Sn_{1 - x}S thin films have been conducted on our original setup.
The use of different experimental methods (reflectivity, absorption, photoconductivity and cathodoluminescence) allowed us to confirm the existence of the deep donor-like state of iron and present allocation and properties of the iron states in Cd_{1-y}Fe_{x}Te (0 ≤ x ≤ 0.05) at 300 K and 77 K in the forbidden gap energy range. It was concluded that the increase in width of the forbidden gap with the change of temperature from 300 K to 77 K leads mainly to the rise of the energy distance between the donor-like iron state ^{5}E and the bottom of the conduction band.
The composition of Zr-based thin films on rubber was investigated by utilizing the Rutherford backscattering technique and RUMP code simulation. The level of adhesion between the coating fabricated on rubber by means of self-ion assisted deposition was measured using Pin Pull Test. The coating deposited on the rubber consists of Zr, O, C, H. The self-ion assisted deposition process may successfully control the level of adhesion of the coating to the rubber and causes strong modification of the macroscopic properties of the rubber surface.
The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with H^{+} ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ (T_{p}, f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ (T_{p}, f) have also been discussed.
The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 μm and the ratio of diameter to height of approximately 1:1, as well as crystallographically oriented line defects with the length equal to 0.2-2 μm. The concentration of these defects depends on the conditions of implantation and plasma treatment.
The main goal of this work is to establish the influence of annealing on the properties of Cz-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350°C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.
This paper presents the investigations of the electrical properties of the (CoFeZr)_{x}(PZT)_{1-x} nanocomposite with the metallic phase content x=43.8 at.%, which was produced by ion beam sputtering. Such preparation took place under an argon atmosphere with low oxygen content with its partial pressure P_{O₂} = 2×10¯³ Pa. The measurements were performed using alternating current within the frequency range of 50 Hz-10⁵ Hz for measuring temperatures ranging from 238 K to 328 K. The (CoFeZr)_{43.8}(PZT)_{56.2} nanocomposite sample subjected to a 15 min annealing process in air at the temperature Tₐ=423 K demonstrates a phase angle of -90° ≤ θ ≤ 0° in the frequency range 50 Hz-10⁵ Hz. It corresponds to the capacitive type of conduction. In the frequency range 10⁴-10⁵ Hz sharp minima in selected conductivity vs. frequency characteristics occur, which corresponds to a current resonance phenomenon in RLC circuits. In case of a sample annealed at Tₐ=498 K the inductive type of conduction with 0° ≤ θ ≤ +90° occurs in a high frequency area. At the frequency f_{r} characterized by the phase angle θ = 0°, the capacity value reaches its local minimum. It indicates a voltage resonance phenomenon in conventional RLC circuits. The θ = +90° crossing in the frequency dependence of phase angle corresponds to the current resonance phenomenon, which is represented by a strong local minimum in the conductivity vs. frequency characteristics.
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