A metastable electron paramagnetic resonance signal is observed in Se doped AlSb. After illumination a strong, persistent electron paramagnetic resonance signal with an isotropic g-factor of 1.949 is observed. The absence of any electron paramagnetic resonance when cooled in the dark is direct evidence for the negative-U model. The electron paramagnetic resonance arises from the effective-mass state of the defect, which is not filled at thermal equilibrium. An analysis of the lineshape reveals that the linewidth is determined by hyperfine interactions. The extend of the wave function is found to be comparable to the prediction for the effective-mass state.
Deep levels in Ga doped n-type CdMnTe of 1% and 5% Mn contents and In doped n-type CdMnTe of 20% Mn content were studied using deep level transient spectroscopy technique. Our deep level transient spectroscopy results show presence of several groups of different traps.
Magnetoreflectance from GaAs:Mn was measured in the free exciton range for B ≤ 5 T and T = 2.0 K. Combining optical results with magnetization data the value for the exchange parameter N_{0}α-N_{0}β =-(2.3 ± 0.6) eV was obtained. Assuming that N_{0}α ≈ +0.2 eV, the ferromagnetic p-d exchange interaction was found with the magnitude N_{0}β ≈ +2.5 eV.
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