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Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites

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Vengalis B., Rosa A., Devenson J., Šliužienė K., Lisauskas V., Oginskis A., Anisimovas F., Pyragas V.

Acta Physica Polonica A

2005

vol. 107

issue 2

290-293

High crystalline quality films of n-La_{2/3}Ce_{1/3}MnO_3, p-La_{2/3}Ca_{1/3}MnO_3 and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO_3(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La_{2/3}Ce_{1/3}Mn O_3/La_{2/3}Ca_{1/3}MnO_3 bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.

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1 Acta Physica Polonica A

1 2005

1 Anisimovas F.

1 Devenson J.

1 Lisauskas V.

1 Oginskis A.

1 Pyragas V.

1 Rosa A.

1 Vengalis B.

1 Šliužienė K.

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Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites