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1
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Mechanism of Thermal Interaction of In with GaAs

100%
Barcz A., Adamczewska J., Baranowski J., Kwiatkowski S.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
801-803
EN
General behavior of In/GaAs couple heat-treated at 570°C for 2 hours was studied with secondary-ion-mass spectrometry, scanning electron microscopy, Rutherford backscattering spectroscopy and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, In interacts with the substrate dislocations to form In(Ga)As dendrites. The driving force for this process is presumably excess arsenic reported to be present in the vicinity of the individual dislocations.
2
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Interfacial Reactions between Thin Films of Zinc and (100)InP

88%
Kamińska E., Piotrowska A., Barcz A., Mizera E., Dynowska E.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
771-774
EN
The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and trans­mission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn_{3}P_{2} phase lattice matched to InP.
3
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Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO

76%
Demchenko I., Melikhov Y., Konstantynov P., Ratajczak R., Barcz A., Guziewicz E.
Acta Physica Polonica A
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2018
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vol. 133
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issue 4
907-909
EN
The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and ≈11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the ¹I multiplet which is almost exclusively responsible for this resonance, while ³H and ³F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb₂O₃.
4
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Atomic Scale Morphology of Thin Au(Zn)/GaAs Ohmic Contacts

76%
Kamińska E., Piotrowska A., Żarecka R., Barcz A., Mizera E., Kwiatkowski S.
Acta Physica Polonica A
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1992
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vol. 82
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issue 5
853-856
EN
Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very close vicinity of the interface.
5
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Shallow Ohmic Contact System to n-GaAs

76%
Kamińska E., Piotrowska A., Piotrowski T., Barcz A., Guziewicz M., Adamczewska J., Kwiatkowski S.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
804-806
EN
Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.
6
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Study of the Local Environment of Mn Ions Implanted in GaSb

76%
Wolska A., Lawniczak-Jablonska K., Klepka M., Barcz A., Hallen A., Arvanitis D.
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|
issue 2
286-292
EN
The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation.
7
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High Mobility 2D Electron Gas in CdTe/CdMgTe Heterostructures

76%
Karczewski G., Jaroszyński J., Kutrowski M., Barcz A., Wojtowicz T., Kossut J.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
829-832
EN
We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd_{1-y}Mg_{y}Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd_{1-y}Mg_{y}Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10^{5} cm^{2}/(V s). This is the highest mobility reported in wide-gap II-VI materials.
8
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Content available

X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen

76%
Wieteska K., Wierzchowski W., Graeff W., Misiuk A., Barcz A., Bryja L., Popov V.
Acta Physica Polonica A
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2002
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vol. 102
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issue 2
239-244
EN
The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4times10^{16} cm^{-2} were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature- pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.
9
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Response of ZnO/GaN Heterostructure to Ion Irradiation

64%
Barcz A., Pągowska K., Kozubal M., Guziewicz E., Borysiewicz M., Dyczewski J., Jakieła R., Ratajczak J., Snigurenko D., Dynowska E.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
832-835
EN
In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grown on GaN substrates by either sputter deposition or atomic layer deposition technique followed by adequate annealing. Ion irradiations of ZnO/GaN were carried out at room temperature using 200 keV Al⁺ ions with fluences of 2×10¹⁵ and 10¹⁶ at./cm². Unprocessed and irradiated samples were characterized by the Rutherford backscattering spectrometry in channeling geometry (RBS\c), X-ray diffraction and transmission electron microscopy. Additionally, secondary ion mass spectrometry was employed for the aforementioned samples as well as for the implanted samples subjected to further annealing. It was found that the damage distributions in ZnO/GaN differ considerably from the corresponding defect profiles in the bulk ZnO and GaN crystals, most probably due to an additional strain originating from the lattice mismatch. Amount of intermixing appears to be relatively small; apparently, efficient recombination prevents foreign atoms to relocate to large distances.
10
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Ohmic Contacts To GaN by Solid-Phase Regrowth

64%
Kamińska E., Piotrowska A., Barcz A., Ilka L., Guziewicz M., Kasjaniuk S., Dynowska E., Kwiatkowski S., Bremser M. D., Davis R. F.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
819-823
EN
Ni/Si-based contact schemes based on the solid-phase regrowth process have been developed to form low-resistance ohmic contacts to GaN with a minimum contact resistivity of 1×10^{-3} Ωcm^{2} and ≈1×10^{-2} Ωcm^{2} to GaN:Si (n ≈ 2×10^{17} cm^{-3}) and GaN:Mg (p ≈ 3×10^{17} cm^{-3}). The solid-phase regrowth process responsible for the ohmic contact formation was studied using X-ray diffraction, secondary ion mass spectrometry and Rutherford backscattering spectrometry.
11
Content available remote

Properties of Si:V Annealed under Enhanced Hydrostatic Pressure

64%
Misiuk A., Wierzchowski W., Wieteska K., Barcz A., Bak-Misiuk J., Chow L., Vanfleet R., Prujszczyk M.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
196-199
EN
It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using V^{+} doses, D = (1-5) × 10^{15} cm^{-2}, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of VSi_2 are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of V^{+} and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.
12
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Indium Doping of CdTe Grown by Molecular Beam Epitaxy

64%
Karczewski G., Zakrzewski A., Kutrowski M., Jaroszyński J., Dobrowolski W., Grodzicka E., Janik E., Wojtowicz T., Kossut J., Barcz A.
Acta Physica Polonica A
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1995
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vol. 87
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issue 1
241-244
EN
We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10^{14} up to 1.3 × 10^{18} cm^{-3}. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10^{18} cm^{-3}). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
13
Content available remote

Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN

64%
Kamińska E., Piotrowska A., Jasiński J., Kozubowski J., Barcz A., Gołaszewska K., Bremser M., Davis R.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
383-386
EN
The microstructure of Ni/Si-based contacts to GaN has been studied using transmission electron microscopy methods. The transition from non-ohmic to ohmic behavior appears to correlate with the initial limited reaction of GaN with Ni and further Si-Ni reaction-driven decomposition of the interfacial GaN-Ni phase.
14
Content available remote

Defect Structure of High-Temperature-Grown GaMnSb/GaSb

64%
Romanowski P., Bak-Misiuk J., Dynowska E., Domagala J., Sadowski J., Wojciechowski T., Barcz A., Jakiela R., Caliebe W.
|
|
issue 2
341-343
EN
GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga_{1-x}Mn_{x}Sb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique.
15
Content available remote

Analysis of Crystal Lattice Deformation by Ion Channeling

52%
Jóźwik P., Sathish N., Nowicki L., Jagielski J., Turos A., Kovarik L., Arey B., Shutthanandan S., Jiang W., Dyczewski J., Barcz A.
Acta Physica Polonica A
|
2013
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vol. 123
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issue 5
828-830
EN
A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded SrTiO_3 samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.
16
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Conductance Fluctuations in Quantum Wires of n-CdTe and n-Cd_{1-x}Mn_{x}Te

52%
Jaroszyński J., Wróbel J., Sawicki M., Skośkiewicz T., Karczewski G., Wojtowicz T., Kossut J., Dietl T., Kamińska E., Papis E., Barcz A., Piotrowska A.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
1000-1004
EN
We present millikelvin studies of magnetoconductance in submicron wires of In-doped n^{+}-CdTe and n^{+}-Cd_{0.99}Mn_{0.01}Te epilayers. Weak-field magnetoresistance which arises from quantum localization as well as universal conductance fluctuations have been observed. The exchange coupling to magnetic impurities is shown to decrease the correlation field of the fluctuations. This novel effect is interpreted by invoking a new driving mechanism of the magnetoconductance fluctuations - the redistribution of the electrons between energy levels of the system, induced by the giant s-d spin-splitting of the electronic states.
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