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EN
Electron spin resonance spectral parameters of V^{4+} ions in vanadate-lithium-borate glasses have been calculated by the crystal-field theory. The theoretical results are g_{∥ } = 1.940, g_{⊥} = 1.983 and A_{∥ } = -175×10^{-4} cm^{-1}, A_{⊥} = -65×10^{-4} cm^{-1} which are good agreement with the experimental values (g_{∥ } = 1.939(3), g_{⊥} = 1.998(3) and A_{∥ } = (170.6-176.4)×10^{-4} cm^{-1}, A_{⊥} = (61.3-71.4)×10^{-4} cm^{-1}). In addition, the bond lengths of the local lattice structure are, respectively, R_{∥ } = 1.5 Å and R_{⊥} = 1.95 Å which have been shown to have a compressed tetrahedral geometry along the C_4 axis.
EN
In this paper, we report for the first time on authentication of Flammulina velutipes cultivars by using strain-specific sequence-characterized amplified region (SCAR) markers developed from inter-simple sequence repeat (ISSR) markers. The genomic DNA polymorphism was analyzed by the ISSR technique in 7 strains of F. velutipes presently cultivated in China on a commercial scale. Eight primers selected from 20 ISSR primers amplified 104 clear and stable bands, of which 81 bands were polymorphic. Among the selected primers, primer ISSR9 can distinguish strain No. 12 from the other 6 strains by amplifying a unique and reproducible band of approximately 750 bp. According to the sequence of the strain-specific fragment, a pair of SCAR primers was designed to diagnose strain No. 12 on the molecular level. The validity of the SCAR marker was confirmed by using DNA samples from another 12 strains of F. velutipes obtained from different parts of China. Our data provided the foundation for a precise and rapid PCR-based strain-diagnostic system for F. Velutipes.
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Photoluminescence Study of GaN

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EN
Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al_{2}O_{3} (100), (111)Si, and (00.1)6H-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant­-related emissions from doped samples were observed. Deep-level yellow emis­sion centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.
EN
High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating Ga_2O_3/Nb films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.
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