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Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

100%

Kundrotas J., Čerškus A., Valušis G., Lachab M., Khanna S., Harrison P., Linfield E.

Acta Physica Polonica A

2008

vol. 113

issue 3

963-966

We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3×10^{12} cm^{-2}.

Photoreflectance of Epitaxial InGaAs Quantum Rods

84%

Nedzinskas R., Karpus V., Čechavičius B., Kavaliauskas J., Valušis G., Li L., Khanna S., Linfield E.

Acta Physica Polonica A

2011

vol. 119

issue 2

164-166

Photoreflectance spectroscopy and photoluminescence have been used to study the optical properties and electronic structure of InGaAs quantum rods grown by molecular beam epitaxy. Spectral features associated with interband optical transitions localized in the quantum rod and the surrounding quantum well regions are examined. Experimental results are compared with calculations performed within the envelope function approximation. A red shift of the quantum rod- and a blue shift of the quantum well-related optical transitions, along with a significant increase in PL intensity have been observed if an As_4 source is used instead of an As_2 source during the molecular beam epitaxial growth.

Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

68%

Seliuta D., Čechavičius B., Kavaliauskas J., Krivaitė G., Grigelionis I., Balakauskas S., Valušis G., Sherliker B., Halsall M., Lachab M., Khanna S., Harrison P., Linfield E.

Acta Physica Polonica A

2008

vol. 113

issue 3

909-912

The authors demonstrate selective detection of terahertz radiation employing berylliumδ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.

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3 Acta Physica Polonica A

1 2011

2 2008

3 Khanna S.

3 Linfield E.

3 Valušis G.

2 Harrison P.

2 Kavaliauskas J.

2 Lachab M.

2 Čechavičius B.

1 Balakauskas S.

1 Grigelionis I.

1 Halsall M.

1 Karpus V.

1 Krivaitė G.

1 Kundrotas J.

1 Li L.

1 Nedzinskas R.

1 Seliuta D.

1 Sherliker B.

1 Čerškus A.

Search results

Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

Photoreflectance of Epitaxial InGaAs Quantum Rods

Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells