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Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content

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Miasojedovas S., Juršėnas S., Kurilčik G., Žukauskas A., Springis M., Tale I., Yang C.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
256-260
EN
We report on high-excitation luminescence spectroscopy of In_xGa_{1-x}N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
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