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Infrared Absorption in Si-Si_{1-x}Ge_{x}-Si Quantum Wells

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Fishman G., Oszwałdowski R.

Acta Physica Polonica A

1997

vol. 92

issue 4

753-756

We use the eight-band k·p model to describe the infrared inter-subband absorption in Si-Si_{1-x}Ge_{x}-Si quantum wells, which takes explicitly into account the Γ'_{25}(Γ_{8}^{+}+Γ_{7}^{+} in the double group) valence band and the second conduction band Γ'_{2}(Γ_{7}ˉ). We then obtain an accurate description of mixing of the S wave function with the valence band functions.

Some New Aspects of Porous Silicon

100%

Fishman G., Romestain R.

Acta Physica Polonica A

1995

vol. 87

issue 2

285-293

We recall the geometry of porous silicon and the order of magnitude of some characteristic parameters. We give a brief review of optical experiments and their different interpretations. We focus on quantitative interpretations and show that an essential concept is confinement in a quantum wire or box. In particular, the exchange energy of electron-hole pairs correlated by Coulomb interaction inside a quantum box explains results obtained between 4 I{ and room temperature. Nevertheless, the large shift of the main luminescence line for similar porous silicon but different electrolytes cannot be explained by quantum confinement alone and has to be accounted for by the difference between the dielectric constants inside and outside the porous silicon. A brief account of electroluminescence experiments is also given.

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2 Acta Physica Polonica A

1 1997

1 1995

2 Fishman G.

1 Oszwałdowski R.

1 Romestain R.

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Infrared Absorption in Si-Si_{1-x}Ge_{x}-Si Quantum Wells

Some New Aspects of Porous Silicon