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Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure

100%
Abdallah B., Al-Khawaja S.
Acta Physica Polonica A
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2015
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vol. 128
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issue 3
283-288
EN
In this paper, preferentially oriented (002) ZnO thin films have been grown on Si (100) and glass substrates using radio frequency magnetron sputtering. The dependence of the quality of the ZnO thin films at different substrate temperatures on the growth is studied. A ZnO thin film with c-axis-oriented würtzite structure is obtained at a growth temperature from 200 to 400°C. X-ray diffraction shows that the full width at half maximum θ -2θ of (002) ZnO/Si is located at approximately 34.42°, which is used to infer the grain size that is found to be 17 nm to 19.7 nm. The FWHM is 9.5° to 8° in rocking curve mode, from which the crystalline quality has been determined. The texture degree demonstrates the improvement in quality with the increase of substrate temperature, which is best at 400°C. The band gap extracted by UV transmittance spectrum has been identified as 3.2 eV at 400°C. The electrical characteristics via C-V and I-V measurements on the basis of the heterojunction thermal emission model confirm the domination of high-density grain boundary layer existing at the interface. The transport currents indicate to the presence of space-charge-limited current and trap-charge-limited current mechanisms.
2
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Characterization of TiAlV Films Prepared by Vacuum Arc Deposition: Effect of Substrate Temperature

81%
Abdallah B., Mrad O., Ismail I.
Acta Physica Polonica A
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2013
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vol. 123
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issue 1
76-79
EN
Three TiAlV films have been prepared by vacuum arc discharge technique at different substrate temperatures (50, 300, and 400°C). The depositions were carried out from aluminum, vanadium and titanium elemental targets. The temperature effects on the crystalline quality and texture have been investigated by means of X-ray diffraction. Two phases have been identified and the grain size has been found to increase with temperature. The composition of the films has been determined by proton induced X-ray emission technique. The Ti ratio was found to increase with temperature. The microhardness, measured by the Vickers indentation method was found to decrease with temperature. X-ray photoelectron spectroscopy was used to study the chemical composition of the passive layer formed on the films by analyzing high resolution spectra of Al 2p, Ti 2p and V 2p. This layer was mainly composed of TiO_2 with a small participation of other oxidation and metallic states of Ti, Al and V.
3
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Effect of Nitrogen Plasma Afterglow on Amorphous Carbon Nitride Thin Films Deposited by Laser Ablation

81%
Alkhawwam A., Abdallah B., Kayed K., Alshoufi K.
|
EN
By employing pulsed laser deposition, amorphous carbon nitride (a-CN_{x}) thin films, were prepared on unheated Si (100). Investigation of compositional and structural modifications induced by microwave nitrogen plasma afterglow on amorphous carbon nitride thin films, has been carried out in the range of nitrogen pressure 10-1000 Pa. The role of nitrogen plasma afterglow on the physicochemical and structural characteristics of a-CN_{x} was explored using the diagnostic techniques: Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Upon analyzing the Raman and X-ray photoelectron spectra, it is concluded that employing nitrogen plasma afterglow during the films deposition favors, in general, the increase in nitrogen content and the formation of sp^2 bonding in the a-CN_{x} films. The analysis of scanning electron and atomic force microscopy images demonstrated that the films had a granular structure formed from particles coalesced together into cauliflower-like clusters and the particles size increased by increasing nitrogen pressure. A 2D atomic force microscopy line profile measurements provide evidence to a decrease in size of clusters using nitrogen plasma afterglow which could be due to the annihilation of excess vacancies and/or the elimination of grain boundaries. These analyses were found to be quite reliable to help understand the effects of microwave nitrogen plasma afterglow on amorphous carbon nitride thin films.
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