Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 12

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture

100%
Godlewski M., Guziewicz E., Gierałtowska S., Łuka G., Krajewski T., Wachnicki Ł., Kopalko K.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue S
S-19-S-21
EN
We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator HfO_{2}. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.
2
Content available remote

Hybrid Organic/ZnO p-n Junctions, with n-Type ZnO, Grown by Atomic Layer Deposition

84%
Łuka G., Krajewski T., Szczerbakow A., Łusakowska E., Kopalko K., Guziewicz E., Wachnicki Ł., Szczepanik A., Godlewski M., Fidelus J.
Acta Physica Polonica A
|
2008
|
vol. 114
|
issue 5
1229-1234
EN
We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.
3
Content available remote

Structure Dependent Conductivity of Ultrathin ZnO Films

84%
Snigurenko D., Kopalko K., Krajewski T., Łuka G., Gierałtowska S., Witkowski B., Godlewski M., Dybko K., Paszkowicz W., Guziewicz E.
Acta Physica Polonica A
|
2012
|
vol. 122
|
issue 6
1042-1044
EN
Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.
4
Content available remote

RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

84%
Ratajczak R., Stonert A., Guziewicz E., Gierałtowska S., Krajewski T., Luka G., Wachnicki L., Witkowski B., Godlewski M.
Acta Physica Polonica A
|
2013
|
vol. 123
|
issue 5
899-903
EN
The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
5
Content available remote

Characterization of ZnO Films Grown at Low Temperature

84%
Przeździecka E., Krajewski T., Wójcik-Głodowska A., Yatsunenko S., Łusakowska E., Paszkowicz W., Guziewicz E., Wachnicki Ł., Szczepanik A., Godlewski M.
Acta Physica Polonica A
|
2008
|
vol. 114
|
issue 5
1303-1310
EN
ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
6
Content available remote

ZnO by ALD - Advantages of the Material Grown at Low Temperature

84%
Guziewicz E., Godlewski M., Krajewski T., Wachnicki Ł., Łuka G., Paszkowicz W., Domagała J., Przeździecka E., Łusakowska E., Witkowski B.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue 5
814-817
EN
The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as 10^{16} cm^{-3} and high mobility (10-50 cm^{2}/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
7
Content available remote

Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application

69%
Wachnicki Ł., Dużyńska A., Domagala J., Witkowski B., Krajewski T., Przeździecka E., Guziewicz M., Wierzbicka A., Kopalko K., Figge S., Hommel D., Godlewski M., Guziewicz E.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 6A
A-7-A-10
EN
Monocrystalline films of zinc oxide were grown at 300C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and Al_2O_3. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.
8
Content available remote

ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors

69%
Łukasiewicz M., Wójcik-Głodowska A., Guziewicz E., Jakieła R., Krajewski T., Łusakowska E., Paszkowicz W., Minikayev R., Kiecana M., Sawicki M., Godlewski M., Wachnicki Ł., Szczepanik A.
Acta Physica Polonica A
|
2008
|
vol. 114
|
issue 5
1235-1240
EN
In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature (T_s=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.
9
Content available remote

Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration

69%
Grzanka S., Łuka G., Krajewski T., Guziewicz E., Jachymek R., Purgal W., Wiśniewska R., Sarzyńska A., Bering-Staniszewska A., Godlewski M., Perlin P.
Acta Physica Polonica A
|
2011
|
vol. 119
|
issue 5
672-674
EN
Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10^{17} cm^{-3}. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10^{20} cm^{-3}. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10^{-3} Ω cm^2. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.
10
Content available remote

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

69%
Krajewski T., Luka G., Smertenko P., Zakrzewski A., Dybko K., Jakiela R., Wachnicki L., Gieraltowska S., Witkowski B., Godlewski M., Guziewicz E.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 6A
A-17-A-21
EN
The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
11
Content available remote

ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution

69%
Łukasiewicz M., Witkowski B., Godlewski M., Guziewicz E., Sawicki M., Paszkowicz W., Łusakowska E., Jakieła R., Krajewski T., Kowalik I., Kowalski B.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue 5
921-923
EN
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
12
Content available remote

Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor

69%
Kowalik I., Guziewicz E., Kopalko K., Yatsunenko S., Godlewski M., Wójcik A., Osinniy V., Krajewski T., Story T., Łusakowska E., Paszkowicz W.
Acta Physica Polonica A
|
2007
|
vol. 112
|
issue 2
401-406
EN
ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.