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EN
Optical transitions between bound and continuum states in multiple-heterojunction quantum structures are numerically investigated. In the conduction band energy range the absorption to continuum is studied within one-band effective-mass approximation. By changing the shape of quantum wells, we can tune the energy corresponding to absorption peak. We also show how the absorption is modified in the case of annealed structures. The inter-subband transitions in the energy range of valence band in Si/Si_{1-x}Ge_{x}/Si quantum well are described with the help of multiband Luttinger-Kohn Hamiltonian. Particular attention is paid to transitions to resonant states.
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EN
We use the eight-band k·p model to describe the infrared inter-subband absorption in Si-Si_{1-x}Ge_{x}-Si quantum wells, which takes explicitly into account the Γ'_{25}(Γ_{8}^{+}+Γ_{7}^{+} in the double group) valence band and the second conduction band Γ'_{2}(Γ_{7}ˉ). We then obtain an accurate description of mixing of the S wave function with the valence band functions.
EN
Semiconductor quantum dots (QDs) doped with magnetic impurities have been a focus of continuous research for a couple of decades. A significant effort has been devoted to studies of magnetic polarons (MP) in these nanostructures. These collective states arise through exchange interaction between a carrier confined in a QD and localized spins of the magnetic impurities (typically: Mn). Our theoretical description of various MP properties in self-assembled QDs is discussed. We present a self-consistent, temperature-dependent approach to MPs formed by a valence band hole. The Luttinger-Kohn k· p Hamiltonian is used to account for the important effects of spin-orbit interaction.
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