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High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

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Sadovyi B., Amilusik M., Staszczak G., Bockowski M., Grzegory I., Porowski S., Konczewicz L., Tsybulskyi V., Panasyuk M., Rudyk V., Karbovnyk I., Kapustianyk V., Litwin-Staszewska E., Piotrzkowski R.

Acta Physica Polonica A

2016

vol. 129

issue 1a

A-126-A-128

Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.

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1 Acta Physica Polonica A

1 2016

1 Amilusik M.

1 Bockowski M.

1 Grzegory I.

1 Kapustianyk V.

1 Karbovnyk I.

1 Konczewicz L.

1 Litwin-Staszewska E.

1 Panasyuk M.

1 Piotrzkowski R.

1 Porowski S.

1 Rudyk V.

1 Sadovyi B.

1 Staszczak G.

1 Tsybulskyi V.

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High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions