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1
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Three- versus Two-Dimensional Electron Gas Injection in Resonant Tunnelling

100%
Figielski T., Wosiński T., Mąkοsa A., Kaniewska M., Regiński K.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 4
707-710
EN
A small "precursor" of resonance is observed before the main resonance peak in the current-voltage characteristic of double-barrier resonant-tunnel­ling devices. The competition between the precursor and main-peak current is examined within the temperature range 4.2-400 K. The precursor is interpreted as 3DEG contribution to the resonant tunnelling dominated by a 2DEG injection from a triangular well formed under bias in the emitter spacer layer.
2
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Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs

86%
Godlewski M., Bergman J. P., Holtz P. O., Monemar B., Bugajski M., Regiński K., Kaniewska M.
Acta Physica Polonica A
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1995
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vol. 88
|
issue 4
719-722
EN
Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown with­out growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth in­terrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized exci­tons are observed in that case.
3
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Low Threshold Room Temperature AlGaAs/GaAs GRIN SCH SQW Lasers Grown by MBE

73%
Kaniewska M., Regiński K., Muszalski J., Kryńska D., Litkowiec A., Kaniewski J., Wesołowski M., Bugajski M.
Acta Physica Polonica A
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1996
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vol. 90
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issue 4
847-850
EN
Low threshold room temperature AlGaAs/GaAs graded-index separate-confinement heterostructure single quantum well (GRIN SCH SQW) lasers were prepared by MBE. The influence of the growth temperature on the laser parameters was studied. Due to the high temperature MBE growth and the use of p-contact layer in the form of thin quasi-metallic beryllium layer significant reduction of the threshold current was achieved.
4
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Identification of Residual Impurities in Si-Doped MBE Grown GaAs

73%
Kaniewska M., Regiński K., Kaniewski J., Muszalski J., Ornoch L., Adamczewska J., Marczewski J., Bugajski M., Mizera E.
Acta Physica Polonica A
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1995
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vol. 88
|
issue 4
775-778
EN
The changes of dopant vaporization enthalpy in GaAs:Si grown by mole­cular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.
5
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Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures

73%
Godlewski M., Monemar B., Anderson T. G., Tsimperidis I., Gregorkiewicz T., Ammerlaan C. A. J., Muszalski J., Kaniewska M.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
990-994
EN
Optically detected cyclotron resonance is used for the identification of recombination transitions of two-dimensional electron gas in A1GaAs/GaAs heterostructures. Two photoluminescence emissions are attributed to the recombination of the two-dimensional electron gas. These are the so-called H-band and the Fermi level singularity photoluminescence. Optical detection of cyclotron resonance is related to the change of the band bending across the GaAs active layer and the AlGaAs barrier, which is caused by impact ionization of shallow donors in the barrier region. Influence of a long range carrier scattering on ionized impurities on a mobility of the two-dimensional carriers is studied.
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