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Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy

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Böttcher T., Einfeldt S., Figge S., Kirchner V., Hommel D., Selke H., Ryder P., Bertram F., Riemann T., Christen J., Lunz U., Becker C.

Acta Physica Polonica A

1998

vol. 94

issue 2

260-264

The luminescence of In_{x}Ga_{1-x}N is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photoluminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap.

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1 Acta Physica Polonica A

1 1998

1 Becker C.

1 Bertram F.

1 Böttcher T.

1 Christen J.

1 Einfeldt S.

1 Figge S.

1 Hommel D.

1 Kirchner V.

1 Lunz U.

1 Riemann T.

1 Ryder P.

1 Selke H.

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Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy