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Improved Performance and Spectral Features of Complex Porous Silicon Structure Containing Silicon Solar Cells

100%
Shatkovskis E., Mitkevičius R., Zagadskij V., Stupakova J.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1121-1124
EN
This work presents porous silicon technology, adapted to improve the characteristics of monocrystalline silicon solar cell. This is achieved by taking advantage of properties provided by porous silicon technology in production of diverse structures in the material. We produce a porous silicon derivative, which is mostly hidden in the emitter of solar cell. Research of the initial and modified solar cells was made by measuring current-voltage characteristics under illumination of a 5000 K xenon lamp. Spectrally resolved studies of current-voltage characteristics were carried out using radiation of halogen lamps and diffraction grating monochromator. Studies revealed that the manufacturing of buried porous silicon structure improves solar cell performance by increasing the fill factor of the modified solar cell current-voltage characteristics, maximum output power and efficiency, when compared to unmodified ones. Spectral studies revealed that the above-mentioned improvement differs for various sections of light spectrum. Largest relative enhancement of solar cell current was observed at the wavelengths of Δ λ = 450-550 nm. We consider the cumulative result of several effects resulting in solar cell efficiency enhancement. Most of them were the influence of porosity on effective optical path length and better anti-reflecting properties of multiple porous structures.
2
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Charge Carrier Heating Effect in Porous Silicon Structures Investigated by Microwaves

88%
Gradauskas J., Šatkovskis E., Česnys A., Stupakova J., Sužiedėlis A.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
993-996
EN
Diode-like samples, containing porous silicon structures, were investigated by microwave radiation pulses. The resistance of the samples and electromotive force arising over the samples placed in a section of waveguide was measured. Reduction of resistance of the samples was observed with increase in microwave power. More complicated shape of the electromotive force dependence on pulse power was found. It is shown that both effects could be explained by models based on a concept of carrier heating by microwave radiation.
3
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Photoresponse of Porous Silicon Structures to Infrared Radiation

76%
Samuolienė N., Širmulis E., Stupakova J., Gradauskas J., Zagadskij V., Šatkovskis E.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
137-139
EN
Photoresponse of silicon samples containing porous structures have been studied under the action of CO_2 laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of porous-crystalline silicon and on the border between the porous layers of different porosity. The photosignal is recognized to be composed of hot hole photoemfs induced across the heterojunctions.
4
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Studies of Response of Metal - Porous Silicon Structures to Microwave Radiation

76%
Stupakova J., Ašmontas S., Gradauskas J., Zagadskij V., Shatkovskis E., Sužiedėlis A.
Acta Physica Polonica A
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2006
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vol. 110
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issue 6
817-822
EN
Structures containing layers of porous silicon with two metal contacts are investigated. Porous silicon is manufactured by anodizing p-type crystalline silicon plates of resistivity of 0.4 Ω cm. Contacts for the samples are made by additional boron doping of the surface and by thermal evaporation of aluminium. Resistance and current-voltage characteristics are investigated. Response of the porous silicon layer containing structures under action of pulsed microwave radiation was investigated for the first time. The origin of the response is discussed.
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