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Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

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Michalczewski K., Ivaldi F., Kubiszyn Ł., Benyahia D., Boguski J., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.

Acta Physica Polonica A

2017

vol. 132

issue 2

325-328

We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.

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1 Acta Physica Polonica A

1 2017

1 Benyahia D.

1 Boguski J.

1 Ivaldi F.

1 Kubiszyn Ł.

1 Kębłowski A.

1 Martyniuk P.

1 Michalczewski K.

1 Piotrowski J.

1 Rogalski A.

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Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique