Search results

1

Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

100%

Dong P., Ma X., Yang D.

|

vol. 125

|

issue 4

972-975

EN

The behaviors of copper (Cu) precipitation along the radial direction of the 300 mm Czochralski grown silicon wafer have been investigated. It is found that the density of Cu precipitates decreases from the center to edge of the silicon wafer. Moreover, it is revealed that the density of grown-in oxygen precipitates also decreases along the radial direction as mentioned above. Therefore, it is apparent that the Cu precipitate density is positively correlative to the grown-in oxygen precipitate density. This is due to that the grown-in oxygen precipitates can serve as the heterogeneous nucleation centers for Cu precipitation. It is suggested that the Cu decoration in combination with preferential etching can be used to indirectly evaluate the radial distribution of grown-in oxygen precipitates in the silicon wafers.

2

Investigations of the Optical Band Positions and Spin-Hamiltonian Parameters for the Rhombic VO^{2+} Complex in CsCl Crystal

100%

Fang W., Zheng W., Yang D., Tang H.

|

vol. 125

|

issue 5

1206-1209

EN

The optical band positions and spin-Hamiltonian parameters (g factors g_{i} and hyperfine structure constants A_{i}, where i=x, y, z) of the rhombic VO^{2+} complex in CsCl crystal are calculated together from two theoretical methods. One is the complete diagonalization (of energy matrix) method and another is the perturbation theory method. The calculated results from the two methods coincide and are in reasonable agreement with the experimental values. So, both methods are effective in the explanations of optical and electron paramagnetic resonance (EPR) data for d^1 ions in crystals. The calculations also suggest that in d^1 rhombic octahedra the ground state is almost a pure | d_{xy} ⟩ state. This point is different from that of conjugate d^9 (e.g., Cu^{2+}) ions in rhombic octahedra where the ground state should be an admixture of ground and first excited states.

3

Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

64%

Misiuk A., Wierzchowski W., Wieteska K., Londos C., Andrianakis A., Bak-Misiuk J., Yang D., Surma B.

|

issue 2

344-347

EN

Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × 10^{14} cm^{-3} (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.

4

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

52%

Wieteska K., Misiuk A., Prujszczyk M., Wierzchowski W., Surma B., Bąk-Misiuk J., Romanowski P., Shalimov A., Capan I., Yang D., Graeff W.

Acta Physica Polonica A

|

2008

|

vol. 114

|

issue 2

439-446

EN

Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (c_O) up to 1.1×10^{18} cm^{-3}, admixed with N or Ge (Si-N, c_N ≤ 1.2×10^{15} cm^{-3}, or Si-Ge, c_{Ge} ≈ 7×10^{17} cm^{-3}, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.

Refine search results

4 Acta Physica Polonica A

2 2014

1 2010

1 2008

4 Yang D.

2 Misiuk A.

2 Surma B.

2 Wierzchowski W.

2 Wieteska K.

1 Andrianakis A.

1 Bak-Misiuk J.

1 Bąk-Misiuk J.

1 Capan I.

1 Dong P.

1 Fang W.

1 Graeff W.

1 Londos C.

1 Ma X.

1 Prujszczyk M.

1 Romanowski P.

1 Shalimov A.

1 Tang H.

1 Zheng W.

Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

Investigations of the Optical Band Positions and Spin-Hamiltonian Parameters for the Rhombic VO^{2+} Complex in CsCl Crystal

Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment