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Observation of Vacancies in Ga_{1-x}Mn_xAs with Positron Annihilation Spectroscopy

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Tuomisto F., Slotte J., Saarinen K., Sadowski J.
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Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As_2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As_2 partial pressure.
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