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Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer

100%
Édes Z., Křápek V., Šikola T.
Acta Physica Polonica A
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2016
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vol. 129
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issue 1a
A-70-A-72
EN
Plasmon-enhanced photoluminescence of silicon nanocrystals embedded in silicon-rich oxinitride thin film is calculated using finite-difference time-domain simulations. Emitters are represented as point-like dipoles and the photoluminescence enhancement is calculated depending on the emitter's position and polarization with respect to the plasmonic metal nanoparticle placed on top of the layer. We show that the photoluminescence enhancement is dominated by the excitation enhancement even for tuning the metal nanoparticle size to the emission wavelength.
2
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Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

100%
Klenovský P., Křápek V., Humlíček J.
Acta Physica Polonica A
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2016
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vol. 129
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issue 1a
A-62-A-65
EN
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 μeV/325 μeV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement.
3
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Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure

100%
Křápek V., Klenovský P., Šikola T.
Acta Physica Polonica A
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2016
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vol. 129
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issue 1a
A-66-A-69
EN
We have theoretically studied type-I and type-II confinement in InAs quantum dots with GaAs_{1-y}Sb_y capping layer. The character of the confinement can be adjusted by the Sb content. We have found that upon the transition from type-I to type-II confinement the hole wave functions change the topology from a compact shape to a two-segment shape, resulting in the complex changes in the exciton fine structure splitting with zero values at narticular compositions. Additionally, a high exciton radiative recombination probability is preserved even in type-II. This allows to design strongly luminescent quantum dots with naturally low fine structure splitting, which could serve as sources of entangled photon pairs for quantum communication.
4
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Determination of Quantum Dot Morphology from Magnetooptical Properties

100%
Křápek V., Schliwa A., Bimberg D.
Acta Physica Polonica A
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2007
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vol. 112
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issue 2
339-343
EN
We present here the calculations of magnetooptical properties in InAs/GaAs quantum dots with different shapes, including excitonic effects. The influence of several structural parameters, such as vertical profile, aspect ratio, and basis squareness is discussed, as well as the possibility to retrieve the structural parameters from magnetooptical measurements.
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