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1
Content available remote

Effect of Thermal Annealing on Optical Properties of Implanted Gaas

100%
Kulik M., Komarov F., Mączka D.
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vol. 96
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issue 1
131-135
EN
GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10^{16} cm^{-2} indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
2
Content available remote

Peculiarities of Swift Proton Transmission through Tapered Glass Capillaries

100%
Komarov F., Kamyshan A., Pil'ko V.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
16-18
EN
A study of the 150-300 keV proton beam transmission through glass (borosilicate) tapered capillaries with different diameters of the input and output of the capillary was performed. The focusing effect was observed. The areal density of the transmitted beam is enhanced by approximately 20 times. It was shown that changing a taper angle from 0.5 deg to 1.7 deg evidences the increase of the transmission coefficient more than by 300 times keeping the initial energy spectrum of ions.
3
Content available remote

Chemical Composition of Native Oxide Layers on In^{+} Implanted and Thermally Annealed GaAs

88%
Kulik M., Kołodyńska D., Żuk J., Komarov F., Filiks J.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
943-947
EN
Semi-insulating GaAs wafers have been implanted with 250 keV In^{+} ions at a fluence of 3 × 10^{16} cm^{-2}. The samples prepared in this way were subsequently annealed at a temperature of 600°C or 800°C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction O^{16}(α,α)O^{16} method. The chemical composition of native oxide layers on In^{+} implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. As_{2}O_{3}, As_{2}O_{5}, Ga_{2}O_{3}, GaAs, InAs and InAsO_4 compounds were detected in these layers.
4
Content available remote

Radiation Degradation of Bipolar Transistor Current Gain

88%
Miskiewicz S., Komarov A., Komarov F., Zayats G., Soroka S.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
288-290
EN
Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the ⁶⁰Co 1.2 MeV γ -rays were calculated. It was shown that the collector current and current gain steadily fall due to irradiation in the considered range in the dose range 0-7×10⁵ rad. The simulation results correlate well with the experimental data obtained at the Research and Production Corporation "Integral".
5
Content available remote

Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with H^{+} Ions

88%
Żukowski P., Węgierek P., Billewicz P., Kołtunowicz T., Komarov F.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
125-128
EN
The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with H^{+} ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ (T_{p}, f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ (T_{p}, f) have also been discussed.
6
Content available remote

Composition and Microstructure of Surface Layers Produced by Ion Beam Assisted Deposition of Metals from a Pulsed Arc-Discharge Plasma onto Aluminum Substrates

88%
Poplavsky V., Komarov F., Luhin V., Pil'ko V., Partyka J.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
946-948
EN
Ion beam assisted deposition of alloying metals (Zn, Cd, Zr, Cr) onto pure aluminum and aluminum alloy substrates from the plasma of a pulsed arc discharge for the purpose of materials corrosion stability was carried out. The Rutherford backscattering spectrometry, electron backscatter diffraction, scanning electron microscopy, and electron probe microanalysis methods were applied to investigate composition and microstructure of the prepared layers. It was found that the obtained layers are characterized by amorphous atomic structure and contain the atoms of deposited metal, substrate material components, as well as impurities of oxygen and carbon; their thickness was measured to be ≈ 30-100 nm.
7
Content available remote

Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions

76%
Komarov A., Velichko O., Zayats G., Komarov F., Miskiewicz S., Mironov A., Makarevich Y.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
804-808
EN
Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and influence of non-uniform defects distribution as well as electric field and elastic stress on the migration of atoms. The redistribution of point defects as well as the diffusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well.
8
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Formation of Perspective Composite Coatings by Ion-Beam Assisted Deposition

76%
Komarov F., Pilko V., Pogrebnjak A., Karvat C., Kiszczak K., Kozak C.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
800-803
EN
TiAlN, TiSiN, and TiCrN composite layers were deposited by magnetron sputtering and sliding - angle ion beam sputtering of the inner surface of hollow truncated cones of different compositions. The composition of both type coatings and component depth distributions were studied by the Rutherford backscattering spectrometry. The structural and phase analyses of the deposited films were performed by transmission electron microscopy and diffraction. Microhardness, wear resistance and friction coefficient of the coatings were also measured and discussed in the relationship with the structure and composition. Microhardness tests showed that the registered data varied in the range 10 to 50 GPa, depending on composition and concentration of components. The best wear protection results from the magnetron deposited Ti-Al-N systems in a narrow range of component concentrations. A minimal friction coefficient was revealed for the magnetron sputtered layers.
9
Content available remote

Nanocrystal- and Dislocation-Related Luminescence in~Si Matrix with InAs Nanocrystals

76%
Komarov F., Vlasukova L., Milchanin O., Mudryi A., Zuk J., Pyszniak K., Kulik M.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
204-207
EN
We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C. A part of the samples implanted at 25°C was additionally exposed to H_2^{+} ions (100 keV, 1.2 × 10^{16} cm^{-2} in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
10
Content available remote

Effect of Thermal Treatment on the Structure and Mechanical Properties of Coatings Based on (Ti, Hf, Nb, Si)N

76%
Pogrebnjak A., Komarov F., Sobol O., Kaverina A., Shypylenko A., Karwat C.
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vol. 125
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issue 6
1312-1316
EN
Current paper presents the results of investigating of nanostructured cathode arc vacuum evaporation coatings, based on (Ti, Hf, Nb, Si)N. Several methods of the structural and elemental analysis were used: proton microbeam, nano- and micro-electron beam, X-ray diffraction analysis. To determine tribological properties (scratch resistance, adhesive and cohesive strength) of the coatings, scratch testing were conducting. Influence of thermal annealing at temperatures 300, 500, 800, 1000C on elemental composition, microstructure, residual stress, phase composition, profiles of atomic distribution in the coatings were investigated.
11
Content available remote

Formation and Characterization of Nanostructured Composite Coatings Based on the TiN Phase

76%
Komarov F., Konstantinov S., Pogrebnjak A., Pilko V., Kozak C., Opielak M.
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vol. 125
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issue 6
1292-1296
EN
Nanostructured thin-film coatings based on titanium nitride, doped with silicon, chromium and aluminium were the object of this study. The creation of a smooth transition layer was carried out by the changing of a supplying nitrogen flow to the vacuum chamber during the application. TiSiN, TiCrN and TiAlN coatings were deposited. The studies of the structure, elemental and phase composition of the coatings were carried out. Also, the performance of coatings was investigated. The results can be used in today's technology, such as mechanical engineering.
12
Content available remote

Simulation of Radiation Effects in SiO₂/Si Structures

76%
Komarov F., Zayats G., Komarov A., Miskiewicz S., Michailov V., Komsta H.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
857-860
EN
The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insulator-semiconductor structures due to irradiation with X-rays is discussed. The system of equations used as a basis for the simulation model is solved iteratively by the efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications.
13
Content available remote

Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis

64%
Komarov F., Vlasukova L., Milchanin O., Mudryi A., Dunetz B., Wesch W., Wendler E., Karwat C.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
87-90
EN
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
14
Content available remote

Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions

64%
Komarov F., Vlasukova L., Milchanin O., Greben M., Parkhomenko I., Mudryi A., Wendler E., Zukowski P.
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vol. 125
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issue 6
1288-1292
EN
Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
15
Content available remote

Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers

52%
Komarov F., Vlasukova L., Milchanin O., Greben M., Komarov A., Mudryi A., Wesch W., Wendler E., Zuk J., Kulik M., Ismailova G.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
809-812
EN
Nanosized crystallites have been synthesized in the Si and SiO_2/Si structures by means of As (170 keV, 3.2 × 10^{16} cm^{-2}) and In (250 keV, 2.8 × 10^{16} cm^{-2}) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.
16
Content available remote

Structure and Properties of Nano- and Microcomposite Coating Based on Ti-Si-N/WC-Co-Cr

52%
Pogrebnjak A., Shpak A., Beresnev V., Il'yashenko M., Komarov F., Shypylenko A., Kaverin M., Zukovski P., Kunitskyi Y., Kolesnikov D., Kolisnichenko O., Makhmudov N.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
100-104
EN
Using the two technologies: plasma-detonation and vacuum-arc deposition, we fabricated two types of coatings: Ti-Si-N/WC-Co-Cr/steel and Ti-Si-N/steel. We found that the top coating of Ti-Si-N was nanostructured one with 12 to 15 nm grain sizes and H = 40 to 38 GPa hardness. A thick coating which was deposited using the pulsed plasma jet, demonstrated 11 to 15.3 GPa hardness, an elastic modulus (E) changing within 176 to 240 GPa, and tungsten carbide grain dimensions varying from 150 to 350 nm to several microns. An X-ray diffraction analysis shows that the coating has the following phase composition: TiN, (Ti,Si)N solid solution, WC, W_2C tungsten carbides. An element analysis was performed using energy dispersive spectroscopy (microanalysis) and scanning electron microscopy, as well as the Rutherford backscattering of ^4He^{+} ion and the Auger electron spectroscopy. Surface morphology and structure were analyzed using scanning electron microscopy and scanning tunnel microscopy. Tests friction and resistance (cylinder-plane) demonstrated essential resistance to abrasive wear and corrosion in the solution. The decrease of grain dimensions ≤ 10 nm occurring in the top Ti-Si-N coating layer increased the sample hardness to 42 ± 2.7 GPa under Ti_{72}-Si_8-N_{20} at.% concentration.
17
Content available remote

Multilayered Nano-Microcomposite Ti-Al-N/TiN/Al_2O_3 Coatings. Their Structure and Properties

52%
Pogrebnjak A., Shpak A., Kirik G., Erdybaeva N., Il'yashenko M., Dem'yanenko A., Kunitskii Y., Kaverina A., Baidak V., Makhmudov N., Zukowski P., Komarov F., Beresnev V., Ruzimov S., Shypylenko A.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
94-99
EN
This paper presents the first results on formation and study of structure and properties of micro- and nanocomposite combined coatings. By means of modeling the deposition processes (deposition conditions, current density-discharge, plasma composition and density, voltage) we formed the three-layer nanocomposite coatings of Ti-Al-N/Ti-N/Al_2O_3. The coating composition, structure and properties were studied using physical and nuclear-physical methods. The Rutherford proton and helium ion backscattering, scanning electron microscopy with microanalysis, grazing incidence X-ray diffraction, as well as nanohardness tests (hardness) were used. Measurements of wear resistance and corrosion resistance in NaCl, HCl and H_2SO_4 solutions were also performed. For testing mechanical properties such characteristics of layered structures as hardness H, elastic modulus E: H^3/E^2 etc. were measured. It is demonstrated that the formed three-layer nanocomposite coatings have hardness of 32 to 36 GPa and elastic modulus of 328 ± 18 to 364 ± 14 GPa. Its wear resistance (cylinder-surface friction) increased by factor of 17 to 25 in comparison with the substrate (stainless steel). The layers thickness was in the range of 56-120 μm.
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