In this paper the results of critical current measurements for MgB_2 wires and tapes in iron sheath with and without nano-SiC doping are presented. We focus on power-in-tube processing technique, using both in situ and ex situ methods. In situ MgB_2 wires and tapes were fabricated from MgH_2 and B or Mg and B powders. The methods such as hydrostatic extrusion and rolling were used. The samples were annealed under high Ar gas pressure (hot isostatic pressing) at 750°C and 1.0 GPa for 40 min. It was found that critical current of MgB_2/Fe superconducting wire or tape with nano-SiC dopant increased in higher magnetic field values in comparison to pure MgB_2. A significant difference of J_c in tapes made by in situ way from MgH_2 and Mg were found.
In order to improve the overall critical current characteristics of Cu sheathed in situ MgB_2 wires a special architecture of the wire, and processing parameters were used. The study presents the influence of the ex situ MgB_2 chemical barrier between ex situ core and Cu, suppressing the reaction of Cu with Mg. Wires, doped with 10 at.% SiC of 18 nm average grain size, were fabricated from MgH_2 and B or from Mg and B powders, using the powder-in-tube method. The methods of rotary swaging or drawing were used as the alternating wire-forming processes. The samples were annealed under high Ar gas pressure (hot isostatic pressing) at 750ºC and 1.0 GPa for 15 and 30 min. A significant difference in Cu distribution across the wires for a long and short time of sintering was observed. The formation of microstructure in the powder-in-tube process and the relationship between the microstructure and critical current density J_c values, are discussed in this paper.
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