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1
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DLTS Study of Be-Doped p-Type AlGaAs/GaAs MBE Layers

100%
Szatkowski J., Płaczek-Popko E., Sierański K., Hansen O.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
565-569
EN
Deep-level transient spectroscopy method was applied to study deep hole traps in p-type Al_{0.5}Ga_{0.5}As grown on GaAs semi-insulating substrate by MBE. Five hole traps labelled by us as H0 to H4 were found. For the traps H1, H3 and H4 thermal activation energies obtained from Arrhenius plots were equal to: E_{H1}=0.15 eV, E_{H3}=0.4 eV, and E_{H4}=0.46 eV. Hole emission from the trap H2 was electric field dependent with the thermal activation energy extrapolated to zero-field equal to 0.37 eV. Capture cross-sections for the traps H1 and H4 were thermally activated with energetic barriers 0.04 eV (for H1) and 0.18 eV (for H4).
2
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Deep Levels in Cd_{0.99}Mn_{0.01}Te:Ga

100%
Szatkowski J., Płaczek-Popko E., Sierański K., Bieg B.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
575-578
EN
Two types of samples were studied. In the material with higher donor concentration four electron traps labelled by us as E1 to E4 were found. For the traps E2 and E3 energies obtained from Arrhenius plots are equal to 0.24 eV and 0.36 eV, respectively. Electric field enhanced electron emission from the levels E1 and E4 was observed and described in terms of Frenkel-Poole mechanism. Capture process from the traps E2 was found to be thermally activated with energetic barriers equal to 0.20 eV for E2.
3
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On the Frequency Domain Relaxation Processes in Gallium Doped CdTe and Cd_{0.99}Mn_{0.01}Te

100%
Trzmiel J., Płaczek-Popko E., Zielony E., Gumienny Z.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
956-958
EN
The dielectric response of gallium doped Cd_{0.99}Mn_{0.01}Te and CdTe alloys possessing DX centers was studied by impedance spectroscopy. Complex modulus and impedance spectroscopic plots were analyzed. Near ideal Debye response of CdTe:Ga was observed, whereas for Cd_{0.99}Mn_{0.01}Te:Ga samples non-Debye behavior was stated. Different relaxation responses may be related to various local atomic configurations in the vicinity of the DX centers in the studied materials.
4
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Electrical Properties of Au/n-GaAs_{1-x}Sb_{x} Contacts

100%
Szatkowski J., Kasprzak J. F., Płaczek-Popko E., Radojewska E. B.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
179-182
EN
The Schottky barrier heights of Au on n-type GaAs_{1-x}Sb_{x} were measured with I-V, C-V, and photoresponse (PR) techniques. The barrier height was determined to be 0.65, 0.75 and 0.7 eV, respectively.
5
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Diffusion Length Studies in CdMnTe by the Surface Photovoltage Method

100%
Płaczek-Popko E., Szaro L., Jędral L.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
187-190
EN
The surface phototovoltage method provides a nondestructive means of measuring minority carriers diffusion length and is suitable for process control applications and for material acceptance tests. Application of the method in the case of CdMnTe compounds has been studied in the present paper. The optimum measurement conditions have been investigated by studying the dependence of measured diffusion length on the experimental conditions. As the surface photovoltage method requires the exact values of absorption coefficient as a function of wavelength, α = f(λ), the dependence has been determined. The minority carrier diffusion length for the sample investigated has been found to be equal to several tenth of μm.
6
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Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes

88%
Dyba P., Płaczek-Popko E., Zielony E., Gumienny Z., Szatkowski J.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
944-946
EN
Deep electron states in gallium doped CdTe have been studied by deep-level transient spectroscopy method. The Schottky Au-CdTe diodes were processed to perform the investigations. Rectifying properties of diodes have been examined by the room temperature current-voltage and capacitance-voltage measurements. Deep-level transient spectroscopy measurements performed in the range of temperatures 77-350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross-sections have been determined from related Arrhenius plots. The dominant trap of activation energy E_2 = 0.33 eV and capture cross-section σ_2 = 3 × 10^{-15} cm^2 has been assigned to the gallium related DX center present in the CdTe material.
7
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Impedance Spectroscopy of Au-CdTe:Ga Schottky Contacts

88%
Płaczek-Popko E., Trzmiel J., Gumienny Z., Wojtyna E., Szatkowski J.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1279-1283
EN
The dielectric response of Au-CdTe gallium doped Schottky contacts was investigated by impedance spectroscopy in the frequency range from 0.2 Hz to 3 MHz, at temperatures in the range from 77 K to 300 K. Combined modulus and impedance spectroscopic plots were analyzed to study the response of the structure. The data were fitted with the simple RC circuit composed of a depletion layer capacitance in parallel with resistance and a series resistance of the bulk CdTe:Ga. The activation energy of the bulk trap obtained from the Arrhenius plot of the resistance was found to be equal to 0.08 eV, close to the value 0.09 eV obtained from the impedance-modulus spectroscopy. The trap dominant in CdTe:Ga is possibly the DX center related, as it has been observed that this is the dominant trap in the material.
8
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Non-Exponential Photoionization of the DX Centers in Gallium Doped CdTe and Cd_{0.99}Mn_{0.01}Te

88%
Trzmiel J., Płaczek-Popko E., Weron K., Szatkowski J., Wojtyna E.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1417-1420
EN
The low temperature non-exponential transients of photoconductivity build-up in gallium doped Cd_{0.99}Mn_{0.01}Te and CdTe alloys possessing DX centers were studied. It was found that the two-exponential model commonly used to explain the persistent photoconductivity growth in semiconductors with DX centers describes properly solely the photokinetics obtained for CdTe:Ga. In the case of Cd_{0.99}Mn_{0.01}Te:Ga the stretched-exponential approach is more appropriate, for it explains the short-time power-law exhibited by the experimental data.
9
Content available remote

Deep Level Transient Spectroscopy Studies of CdMnTe

76%
Szatkowski J., Płaczek-Popko E., Hajdusianek A., Kuźmiński S., Bieg B., Becla P.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
387-390
EN
Deep levels in Ga doped n-type CdMnTe of 1% and 5% Mn contents and In doped n-type CdMnTe of 20% Mn content were studied using deep level transient spectroscopy technique. Our deep level transient spectroscopy results show presence of several groups of different traps.
10
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Hole Traps in ZnTe with CdTe Quantum Dots

76%
Zielony E., Płaczek-Popko E., Gumienny Z., Trzmiel J., Karczewski G., Guziewicz M.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
885-887
EN
In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
11
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Si/ZnO nanorods with Ag nanoparticles/AZO heterostructures in PV applications

64%
Gwóźdź K., Płaczek-Popko E., Gumienny Z., Zielony E., Pietruszka R., Witkowski B. S., Wachnicki Ł., Gierałtowska S., Godlewski M., Chang L. B.
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2016
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issue 3
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